Improvement of Quantum-Well Intermixing through Adjusting P-Doped Layer for High-Performance SOA-Integrated EAM

2019 ◽  
Author(s):  
Yang-Jeng Chen ◽  
Yi-Hsin Fang ◽  
Wen-kuan Hsu ◽  
Rih-You Chen ◽  
Cong-Long Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Quantum Well Intermixing

scholarly journals High performance InGaAsP lasers fabricated by ion-implantation induced quantum well intermixing

2008 ◽  
Vol 5 (21) ◽  
pp. 901-907 ◽  
Author(s):  
Yen-Ting Pan ◽  
San-Liang Lee ◽  
Der-Yuh Lin ◽  
Jiun-De Wu
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
High Performance ◽  
Quantum Well Intermixing

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

scholarly journals Characterization of selective quantum well intermixing in 1.3 μm GaInNAs/GaAs structures

2003 ◽  
Vol 94 (3) ◽  
pp. 1550-1556 ◽  
Author(s):  
H. D. Sun ◽  
R. Macaluso ◽  
M. D. Dawson ◽  
F. Robert ◽  
A. C. Bryce ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser

2011 ◽  
Vol 98 (5) ◽  
pp. 051107 ◽  
Author(s):  
M. Feng ◽  
N. Holonyak ◽  
A. James
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
High Performance ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Transistor Laser ◽  
Narrow Stripe

Optimized Ge1−xSnx/Ge Multiple-Quantum-Well Heterojunction Phototransistors for High-Performance SWIR Photodetection

2018 ◽  
Vol 18 (14) ◽  
pp. 5842-5852 ◽  
Author(s):  
Ankit Kumar Pandey ◽  
Rikmantra Basu ◽  
Guo-En Chang
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Phosphor vacancy induced quantum well intermixing and its application in DBR laser using SiO>inf<2>/inf<grating

2006 ◽  
Author(s):  
J.H. Teng ◽  
J.R. Dong ◽  
S.J. Chua ◽  
B.S. Foo ◽  
M.Y. Lai ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

High performance In0.15Ga0.85As/Al0.15Ga0.85As quantum well modulation doped FETs

1985 ◽  
Author(s):  
W.T. Masselink ◽  
J. Klem ◽  
T. Henderson ◽  
A. Ketterson ◽  
J.S. Gedymin ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance

Barrier-enhanced InGaAs/InAlAs photodetectors using quantum-well intermixing

2004 ◽  
Vol 48 (10-11) ◽  
pp. 1783-1790 ◽  
Author(s):  
Gregory B. Tait ◽  
David B. Ameen
Keyword(s):  
Quantum Well ◽  
Quantum Well Intermixing

Optical Diagnostics of Microstructures Fabricated Using Quantum Well Intermixing

1999 ◽  
Vol 607 ◽  
Author(s):  
A. Saher Helmy ◽  
A.C. Bryce ◽  
C.N. Ironside ◽  
J.S. Aitchison ◽  
J.H. Marsh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Quantum Well ◽  
Spatial Resolution ◽  
Optical Diagnostics ◽  
Complete Suppression ◽  
Quantum Well Intermixing ◽  
Spatially Resolved ◽  
Non Destructive ◽  
Insight Into ◽  
Free Vacancy

AbstractIn this paper we shall discuss techniques for accurate, non-destructive, optical characterisation of structures fabricated using quantum well intermixing (QWI). Spatially resolved photoluminescence and Raman spectroscopy were used to characterise the lateral bandgap profiles produced by impurity free vacancy disordering (IFVD) technology. Different features were used to examine the spatial resolution of the intermixing process. Features include 1:1 gratings as well as isolated stripes. From the measurements, the spatial selectivity of IFVD could be identified, and was found to be ∼4.5 μm, in contrast with the spatial resolution of the process of sputtering induced intermixing, which was found to be ∼2.5 μm. In addition, PL measurements on 1:1 gratings fabricated using IFVD show almost complete suppression of intermixing dielectric cap gratings with periods less than 10 microns. Finally, some insight into the limitations and merits of PL and Raman for the precision characterisation of QWI will be presented.

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