In-situ large scale deposition of PZT films by RF magnetron sputtering

Author(s):  
Martin Kratzer ◽  
Lorenzo Castaldi ◽  
Bernd Heinz ◽  
Robert Mamazza ◽  
Dirk Kaden ◽  
...  
2005 ◽  
Vol 875 ◽  
Author(s):  
A. R. Abuzir ◽  
W. J. Yeh

AbstractDue to their large magnetic anisotropy perpendicular to the film plane, barium ferrite thick films (BaFe12O19, or BaM) with c-axis orientation are attractive candidates for microwave applications [1,2]. Barium ferrite thin films on silicon substrates without under layer have been deposited under various conditions by RF magnetron sputtering. The structure of the as-grown films is amorphous. External annealing in air has been done at 950°C for ten minutes to crystallize the films. C-axis oriented thin films with squareness of about 0.87 and coercivity of about 3.8KOe are obtained.Thick BaM films with c-axis orientation are difficult to achieve with one single deposition. Multilayer technique looks promising to grow thick films [3]. The external annealing process is difficult to incorporate with the multilayer procedure. An in-situ annealing procedure has been developed to obtain films, which can be used as the basic component for future multilayer deposition. Barium ferrites are first magnetron sputtered on bare silicon substrates in Ar + O2 atmosphere at substrate temperature of 500-600°C, the deposition pressure was kept about 0.008 torr. After the deposition, the temperature of the substrate is immediately increased to about 860°C for ten minutes in 140 torr of argon (80%) and oxygen (20%) mixture of gas, which was introduced into the chamber without breaking the vacuum. With the in-situ process, c-axis oriented thin films of 0.88 squareness and coercivity value of about 4.3KOe are obtained.Both annealing methods seem to have the similar effect on the perpendicular squareness and coercivity at various film thicknesses. The average value of the saturation magnetization Ms obtained from the in-situ annealing using multilayer technique is higher than that of the external one. We have grown films up to 1.0 micron thickness using the multilayer technique, in which three layers of 0.3 μm thickness each are deposited until the final thickness is reached. After the deposition of each layer, it was in-situ annealed before starting the deposition of the next layer. With the multilayer technique, coercivity of about 3.5 KOe and average value of the saturation magnetization Ms of about 4.0 K Gauss is obtained.


1997 ◽  
Vol 493 ◽  
Author(s):  
F. Ayguavives ◽  
P. Aubert ◽  
B. Ea-Kim ◽  
B. Agius

ABSTRACTLead zirconate titanate (PZT) thin films have been grown by rf magnetron sputtering on Si substrates from a metallic target of nominal composition Pb1.1(Zr0.4 Ti0.6 in a reactive argon / oxygen gas mixture. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements show clearly a correlation between the evolution of characteristic atomic emission line intensities (Zr - 386.4 nm, Ti - 399.9 nm, Pb - 405.8 nm and O - 777.2 nm) and the thin-film composition determined by a simultaneous use of Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA).


1998 ◽  
Vol 13 (12) ◽  
pp. 3442-3448 ◽  
Author(s):  
Dong Joo Kim ◽  
Tae Song Kim ◽  
Jeon Kook Lee ◽  
Hyung Jin Jung

The lead zirconate titanate (PZT) thin film was deposited on platinized silicon wafer substrate by the rf magnetron sputtering method. In order to investigate the effect of cooling ambient, oxygen partial pressure was controlled during cooling PZT films. The PZT films cooled at lower oxygen partial pressure had perovskite phase and pyrochlore phase in both as-grown and postannealed films, but in the PZT films cooled at higher oxygen partial pressure, pyrochlore phases were not detected by XRD. As the oxygen partial pressure became lower during cooling, the capacitors had low values of remanent polarization and coercive field for as-grown films. The PZT capacitor with such a low value was recovered by postannealing in air, but its electrical properties had the same tendency before and after annealing. Microstructure was also affected by cooling ambient. Higher oxygen partial pressure on cooling reduced the number of very fine grains, and enhanced uniform grain distribution. Fatigue characteristics were also enhanced by cooling at higher oxygen partial pressure. However, the imprint was negligible irrespective of oxygen partial pressure upon cooling. The cooling procedure at higher oxygen ambients is believed to reduce the amounts of nonferroelectric second phases and oxygen vacancies. We find that oxygen partial pressure during cooling is a considerable process parameter. Therefore, care should be taken in treating the parameter after depositing films.


2008 ◽  
Vol 40 (7) ◽  
pp. 2243-2246 ◽  
Author(s):  
S. Scalese ◽  
V. Scuderi ◽  
F. Simone ◽  
A. Pennisi ◽  
V. Privitera

1989 ◽  
Vol 169 ◽  
Author(s):  
R. L. Meng ◽  
Y. Q. Wang ◽  
Y. Y. Sun ◽  
Li Gao ◽  
P. H. Hor ◽  
...  

AbstractThe synthesis parameters have been systematically examined for the in situ growth of high temperature superconducting Y‐Ba‐Cu‐0 thin films from a stoichiometric target by rf magnetron sputtering. By properly adjusting the deposition temperature, the total sputtering (O2+Ar)‐pressure and the O2‐partial pressure, we have reproducibly obtained 123 YBCO films with a zero resistivity temperature Tcz = 84 K and a transition width of 3 K°. The films so obtained have excellent surface morphology and a surface roughness better than ∼ 5 nm.


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