A 2.4 GHz 82 dBΩ Fully Differential CMOS Transimpedance Amplifier for Optical Receiver Based on Wide-Swing Cascode Topology

2005 ◽  
Author(s):  
Yanjie Wang ◽  
R. Raut
Keyword(s):  
Optical Receiver ◽  
Transimpedance Amplifier ◽  
Fully Differential

90-Gb/s NRZ Optical Receiver in Silicon Using a Fully Differential Transimpedance Amplifier

2019 ◽  
Vol 37 (9) ◽  
pp. 1964-1973 ◽  
Author(s):  
Joris Lambrecht ◽  
Hannes Ramon ◽  
Bart Moeneclaey ◽  
Jochem Verbist ◽  
Michiel Verplaetse ◽  
...  
Keyword(s):  
Optical Receiver ◽  
Transimpedance Amplifier ◽  
Fully Differential

A Fully Differential CMOS Transimpedance Amplifier for Optical Receiver

Frequenz ◽  
2007 ◽  
Vol 61 (11-12) ◽  
Author(s):  
Varakorn Kasemsuwan ◽  
Wacharapol Pongpalit
Keyword(s):  
Optical Receiver ◽  
Transimpedance Amplifier ◽  
Fully Differential

scholarly journals RF Transimpedance Amplifier for CATV Applications over PON

2017 ◽  
Vol 5 ◽  
Author(s):  
Guillermo Royo ◽  
Carlos Sánchez-Azqueta ◽  
Concepción Aldea ◽  
Santiago Celma
Keyword(s):  
Communication Systems ◽  
Gain Control ◽  
Cmos Technology ◽  
Transimpedance Amplifier ◽  
Control Range ◽  
Fully Differential ◽  
Rf Signals ◽  
Input Range ◽  
Transimpedance Gain

In this work, we present a fully differential transimpedance amplifier (TIA) with controllable transimpedance for use in RF overlay downstream communication systems. The transimpedance amplifier has been designed in a standard 180-nm CMOS technology and it is intended for 47 MHz to 870 MHz subcarrier multiplexed RF signals. It performs a 18 dBΩ transimpedance gain control range for extended optical input range from -6 dBm up to +2 dBm.

scholarly journals A Sub-mW 18-MHz MEMS Oscillator Based on a 98-dBΩ Adjustable Bandwidth Transimpedance Amplifier and a Lamé-Mode Resonator

Sensors ◽  
2019 ◽  
Vol 19 (12) ◽  
pp. 2680
Author(s):  
Anoir Bouchami ◽  
Mohannad Y. Elsayed ◽  
Frederic Nabki
Keyword(s):  
Phase Noise ◽  
Cmos Technology ◽  
High Gain ◽  
Transimpedance Amplifier ◽  
Short Term ◽  
Microelectromechanical System ◽  
Fully Differential ◽  
Mems Oscillator ◽  
Measured Input ◽  
Mode Resonator

This paper presents a microelectromechanical system (MEMS)-based oscillator based on a Lamé-mode capacitive micromachined resonator and a fully differential high-gain transimpedance amplifier (TIA). The proposed TIA is designed using TSMC 65 nm CMOS technology and consumes only 0.9 mA from a 1-V supply. The measured mid-band transimpedance gain is 98 dB Ω and the TIA features an adjustable bandwidth with a maximum bandwidth of 142 MHz for a parasitic capacitance C P of 4 pF. The measured input-referred current noise of the TIA at mid-band is below 15 pA/ Hz . The TIA is connected to a Lamé-mode resonator, and the oscillator performance in terms of phase noise and frequency stability is presented. The measured phase noise under vacuum is −120 dBc/Hz at a 1-kHz offset, while the phase noise floor reaches −127 dBc/Hz. The measured short-term stability of the MEMS-based oscillator is ±0.25 ppm.

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