Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 μm
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2004 ◽
1999 ◽
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Keyword(s):
2001 ◽
pp. 9518-9526
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2009 ◽
Vol 15
(3)
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pp. 844-849
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