Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

2005 ◽

Author(s):

A.J. Fischer ◽

J.F. Klem ◽

K.D. Choquette ◽

O. Blum ◽

A.A. Allerman ◽

...

Keyword(s):

Quantum Well ◽

Continuous Wave ◽

Quantum Well Lasers ◽

Continuous Wave Operation ◽

Vertical Cavity

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A highly strained (λ=1.12 μm) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarization

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) ◽

10.1109/islc.2000.882264 ◽

2002 ◽

Author(s):

N. Nishiyama ◽

M. Arai ◽

S. Shinada ◽

T. Miyamoto ◽

F. Koyama ◽

...

Keyword(s):

Highly Strained

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A new approach to improved green emitting II-VI laser diodes

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) ◽

10.1109/islc.2000.882310 ◽

2002 ◽

Author(s):

M. Strassburg ◽

O. Schulz ◽

U.W. Pohl ◽

D. Bimberg ◽

M. Klude ◽

...

Keyword(s):

Laser Diodes ◽

New Approach

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1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 μm band

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) ◽

10.1109/islc.2000.882293 ◽

2002 ◽

Author(s):

F. Koyama ◽

D. Schlenker ◽

T. Miyamoto ◽

Z. Chen ◽

T. Yamatoya ◽

...

Keyword(s):

Quantum Well ◽

Superluminescent Diode ◽

Highly Strained

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Transverse and polarization mode selection in vertical-cavity surface-emitting lasers

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) ◽

10.1109/islc.2000.882309 ◽

2002 ◽

Author(s):

J. Mulet ◽

S. Balle ◽

M.S. Miguel ◽

C.R. Mirasso

Keyword(s):

Mode Selection ◽

Cavity Surface ◽

Polarization Mode ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

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AlGaInN laser diodes grown on an ELO-GaN substrate vs. on a sapphire substrate

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) ◽

10.1109/islc.2000.882312 ◽

2002 ◽

Author(s):

T. Asano ◽

T. Tojyo ◽

K. Yanashima ◽

M. Takeya ◽

T. Hino ◽

...

Keyword(s):

Sapphire Substrate ◽

Laser Diodes

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Interband tunneling in InAs/GaSb type-II cascade structure

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) ◽

10.1109/islc.2000.882291 ◽

2002 ◽

Author(s):

M. Kisin ◽

M.A. Stroscio ◽

G. Belenky ◽

S. Luryi

Keyword(s):

Type Ii ◽

Interband Tunneling ◽

Cascade Structure

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A novel configuration of 980 nm pumping laser module using fiber Bragg grating and polarization maintaining fiber

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) ◽

10.1109/islc.2000.882270 ◽

2002 ◽

Cited By ~ 2

Author(s):

T. Yamaguchi ◽

Y. Ohki ◽

Y. Irie ◽

T. Shimizu ◽

A. Kasukawa

Keyword(s):

Fiber Bragg Grating ◽

Bragg Grating ◽

Polarization Maintaining Fiber ◽

Polarization Maintaining ◽

Laser Module

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All-optical 3R regenerators: status and challenges

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) ◽

10.1109/islc.2000.882261 ◽

2002 ◽

Author(s):

F. Devaux

Keyword(s):

All Optical

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Noise of modelocked laser diodes

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) ◽

10.1109/islc.2000.882331 ◽

2002 ◽

Author(s):

L.A. Jiang ◽

M.E. Grein ◽

H.A. Haus ◽

E.P. Ippen

Keyword(s):

Laser Diodes

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Continuous wave operation of 1.3 μm vertical cavity InGaAsN quantum well lasers

A highly strained (λ=1.12 μm) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarization

A new approach to improved green emitting II-VI laser diodes

1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 μm band

Transverse and polarization mode selection in vertical-cavity surface-emitting lasers

AlGaInN laser diodes grown on an ELO-GaN substrate vs. on a sapphire substrate

Interband tunneling in InAs/GaSb type-II cascade structure

A novel configuration of 980 nm pumping laser module using fiber Bragg grating and polarization maintaining fiber

All-optical 3R regenerators: status and challenges

Noise of modelocked laser diodes

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Continuous wave operation of 1.3 μm vertical cavity InGaAsN quantum well lasers

A highly strained (λ=1.12 μm) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarization

A new approach to improved green emitting II-VI laser diodes

1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 μm band

Transverse and polarization mode selection in vertical-cavity surface-emitting lasers

AlGaInN laser diodes grown on an ELO-GaN substrate vs. on a sapphire substrate

Interband tunneling in InAs/GaSb type-II cascade structure

A novel configuration of 980 nm pumping laser module using fiber Bragg grating and polarization maintaining fiber

All-optical 3R regenerators: status and challenges

Noise of modelocked laser diodes

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
Latest Publications