A High Power X-band GaN Solid-State Power Amplifier with 55% PAE

Author(s):  
Yapeng Wang ◽  
Xinnan Lin
2021 ◽  
Author(s):  
Mynam Harinath ◽  
S K Garg ◽  
Suman Aich ◽  
Tuhin Paul ◽  
Anand K ◽  
...  

Author(s):  
Kazuhiro Kanto ◽  
Akihiro Satomi ◽  
Yasuaki Asahi ◽  
Yasushi Kashiwabara ◽  
Keiichi Matsushita ◽  
...  

Author(s):  
B. V. Emelyanov

In this paper the principles of measuring the amplitude-phase stability are described. Fa ctors that negatively affect the amplitude-phase stability of a solid-state power amplifier are considered. The results of theoretical calculations and mathematical modeling of the dependence of this stability on various factors are presented, and on the basis of these results the main factors that negatively affect the amplitude-phase stability are identified. In the conclusion I present the results of practical measurements of the stability, and suggest methods to improve the amplitude-phase stability of high-power solid-state power amplifiers.


2009 ◽  
Vol 30 (9) ◽  
pp. 095001 ◽  
Author(s):  
Chen Chi ◽  
Hao Yue ◽  
Feng Hui ◽  
Yang Linan ◽  
Ma Xiaohua ◽  
...  

Author(s):  
V. E. Akinin ◽  
O. V. Borisov ◽  
K. A. Ivanov ◽  
Yu. V. Kolkovskiy ◽  
V. M. Minnebaev ◽  
...  

In this paper we present the results of the design and production of an air-cooled X-band solid-state power amplifier based on AlGaN/GaN/SiC Schottky FET. The power amplifier includes: preliminary power amplifier, output power amplifiers, set of secondary power supplies, digital control unit, monitoring system for the power amplifier performance, set of microwave power waveguide combiners.


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