scholarly journals Single-mode and polarization-independent silicon-on-insulator waveguides with small cross section

2005 ◽  
Vol 23 (6) ◽  
pp. 2103-2111 ◽  
Author(s):  
Seong Phun Chan ◽  
Ching Eng Png ◽  
Soon Thor Lim ◽  
G.T. Reed ◽  
V.M.N. Passaro
2001 ◽  
Vol 20 (3) ◽  
pp. 207-219
Author(s):  
G. Cocorullo ◽  
F. G. Della Corte ◽  
M. Iodice ◽  
T. Polichetti ◽  
I. Rendina ◽  
...  

2003 ◽  
Author(s):  
Robert R. Whiteman ◽  
Andrew P. Knights ◽  
David George ◽  
Ian E. Day ◽  
Adrian Vonsovici ◽  
...  

2002 ◽  
Vol 210 (1-2) ◽  
pp. 43-49 ◽  
Author(s):  
L Vivien ◽  
S Laval ◽  
B Dumont ◽  
S Lardenois ◽  
A Koster ◽  
...  

2004 ◽  
Vol 22 (8) ◽  
pp. 1923-1929 ◽  
Author(s):  
J. Lousteau ◽  
D. Furniss ◽  
A.B. Seddon ◽  
T.M. Benson ◽  
A. Vukovic ◽  
...  

Author(s):  
Nurdiani Zamhari ◽  
Abang Annuar Ehsan ◽  
Mohd Syuhaimi Abdul Rahman

S-bend contributes the high losses in the silicon-on-insulator (SOI) large cross-section rib waveguide (LCRW). The objective of this work is to investigate S-bend SOI LCRW with two different single-mode dimensions named symmetrical and asymmetrical. The S-bend SOI LCRW has been simulating using beam propagation method in OptiBPM software. The asymmetrical waveguide with two different dimension arc given the best performance if compared to others dimension with 3 µm of waveguide spacing. It achieved 92.24% and 91.10% of normalized output power (NOP) for 1550 nm and 1480 nm wavelength respectively. Moreover, the minimum of S-bend spacing between the two cores is 0.9 µm for both 1550 nm and 1480 nm. Therefore, asymmetrical waveguide with two different dimension arc and 0.9 µm of S-bend spacing are chosen. This analysis is important to determine the right parameter in order to design the SOI passive devices. However, future work should be done to see the performance by designing the coupler and implement in the real system.


2008 ◽  
Vol 26 (13) ◽  
pp. 1840-1846 ◽  
Author(s):  
Milan M. Milosevic ◽  
Petar S. Matavulj ◽  
Branislav D. Timotijevic ◽  
Graham T. Reed ◽  
Goran Z. Mashanovich

2008 ◽  
Vol 62 (3) ◽  
pp. 119-124
Author(s):  
Milan Milosevic ◽  
Petar Matavulj ◽  
Goran Mashanovich

In this paper we investigate the most popular silicon waveguide structures in the form of a silicon-on-insulator (SOI) rib waveguide. Single mode and birefringence free conditions in these relatively small waveguides are discussed and the influence of the top oxide cladding stress is analyzed. Field profiles for a wide range of waveguide cross section shapes and dimensions are systematically considered. Design guidelines for this type of SOI waveguides are presented.


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