Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier

IEEE Photonics Journal ◽

10.1109/jphot.2014.2387253 ◽

2015 ◽

Vol 7 (1) ◽

pp. 1-10 ◽

Author(s):

Xianglong Bao ◽

Pai Sun ◽

Songqing Liu ◽

Chunya Ye ◽

Shuping Li ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Performance Improvements ◽

Deep Ultraviolet ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Enhancement of hole injection in deep ultraviolet light-emitting diodes using a serrated P-type layer

Optics Communications ◽

10.1016/j.optcom.2018.10.024 ◽

2019 ◽

Vol 433 ◽

pp. 236-241 ◽

Author(s):

Yufei Hou ◽

Zhiyou Guo

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Hole Injection ◽

Light Emitting ◽

Deep Ultraviolet ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron blocking layers

Optics Communications ◽

10.1016/j.optcom.2019.02.054 ◽

2019 ◽

Vol 441 ◽

pp. 149-154 ◽

Author(s):

Hengzhi Shi ◽

Huaimin Gu ◽

Jihang Li ◽

Xianqi Yang ◽

Jinyuan Zhang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Performance Improvements ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.04fh08 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FH08 ◽

Author(s):

Noritoshi Maeda ◽

Joosun Yun ◽

Masafumi Jo ◽

Hideki Hirayama

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Extraction Efficiency ◽

Light Extraction ◽

Light Extraction Efficiency ◽

Light Emitting ◽

Deep Ultraviolet ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Transparent deep ultraviolet light-emitting diodes with a p-type AlN ohmic contact layer

Light-Emitting Devices, Materials, and Applications ◽

10.1117/12.2506918 ◽

2019 ◽

Author(s):

Jianping Zhang ◽

Ying Gao ◽

Ling Zhou ◽

Young-Un Gil ◽

Kyoung-Min Kim

Keyword(s):

Ultraviolet Light ◽

Ohmic Contact ◽

Light Emitting Diodes ◽

Contact Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport

Journal of Electronic Materials ◽

10.1007/s11664-021-09363-z ◽

2022 ◽

Author(s):

Ravi Teja Velpula ◽

Barsha Jain ◽

Trupti Ranjan Lenka ◽

Renjie Wang ◽

Hieu Pham Trung Nguyen

Keyword(s):

Ultraviolet Light ◽

Carrier Transport ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Improved light extraction efficiency of AlGaN deep-ultraviolet light emitting diodes combining Ag-nanodots/Al reflective electrode with highly transparent p-type layer

Optics Express ◽

10.1364/oe.416826 ◽

2021 ◽

Author(s):

na zhang ◽

Fujun Xu ◽

Jing Lang ◽

Liubing Wang ◽

Jiaming Wang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Extraction Efficiency ◽

Light Extraction ◽

Light Extraction Efficiency ◽

Light Emitting ◽

Deep Ultraviolet ◽

P Type ◽

Ultraviolet Light Emitting Diodes

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Improved Characteristics of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Superlattice p-Type Doping

IEEE Photonics Journal ◽

10.1109/jphot.2017.2699322 ◽

2017 ◽

Vol 9 (3) ◽

pp. 1-7 ◽

Author(s):

Qianying Si ◽

Hangyang Chen ◽

Shuping Li ◽

Shiqiang Lu ◽

Junyong Kang

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

P Type ◽

Ultraviolet Light Emitting Diodes ◽

Improved Characteristics

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265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions

Applied Physics Express ◽

10.35848/1882-0786/abb86f ◽

2020 ◽

Vol 13 (10) ◽

pp. 102005 ◽

Author(s):

Ryota Ishii ◽

Akira Yoshikawa ◽

Kazuhiro Nagase ◽

Mitsuru Funato ◽

Yoichi Kawakami

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Selective Excitation ◽

Photoluminescence Spectroscopy ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes ◽

Excitation Conditions

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Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.200903400 ◽

2010 ◽

Vol 4 (1-2) ◽

pp. 49-51 ◽

Author(s):

Yitao Liao ◽

Christos Thomidis ◽

Chen-kai Kao ◽

Adam Moldawer ◽

Wei Zhang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Ultraviolet Light ◽

Molecular Beam ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

IEEE Photonics Journal ◽

10.1109/jphot.2020.3047846 ◽

2021 ◽

Vol 13 (1) ◽

pp. 1-8

Author(s):

J. Lang ◽

F. J. Xu ◽

Y. H. Sun ◽

N. Zhang ◽

J. M. Wang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Velocity Modulation ◽

Deep Ultraviolet ◽

Carrier Velocity ◽

Ultraviolet Light Emitting Diodes

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