ohmic contact
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2022 ◽  
Vol 139 ◽  
pp. 106370
Author(s):  
Eslam Abubakr ◽  
Shinya Ohmagari ◽  
Abdelrahman Zkria ◽  
Hiroshi Ikenoue ◽  
Tsuyoshi Yoshitake

Author(s):  
Xiu-Yu Lin ◽  
Hsing-Cheng Chang ◽  
Bo-Lin Huang ◽  
Yow-Jon Lin
Keyword(s):  

Sensors ◽  
2022 ◽  
Vol 22 (2) ◽  
pp. 630
Author(s):  
Ji-Yeon Choy ◽  
Eun-Bee Jo ◽  
Chang-Joo Yim ◽  
Hae-Kyung Youi ◽  
Jung-Hoon Hwang ◽  
...  

Research on stretchable strain sensors is actively conducted due to increasing interest in wearable devices. However, typical studies have focused on improving the elasticity of the electrode. Therefore, methods of directly connecting wire or attaching conductive tape to materials to detect deformation have been used to evaluate the performance of strain sensors. Polyaniline (PANI), a p-type semiconductive polymer, has been widely used for stretchable electrodes. However, conventional procedures have limitations in determining an appropriate metal for ohmic contact with PANI. Materials that are generally used for connection with PANI form an undesirable metal-semiconductor junction and have significant contact resistance. Hence, they degrade sensor performance. This study secured ohmic contact by adapting Au thin film as the metal contact layer (the MCL), with lower contact resistance and a larger work function than PANI. Additionally, we presented a buffer layer using hard polydimethylsiloxane (PDMS) and structured it into a dumbbell shape to protect the metal from deformation. As a result, we enhanced steadiness and repeatability up to 50% strain by comparing the gauge factors and the relative resistance changes. Consequently, adapting structural methods (the MCL and the dumbbell shape) to a device can result in strain sensors with promising stability, as well as high stretchability.


Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 50
Author(s):  
Matthias Kocher ◽  
Mathias Rommel ◽  
Pawel Michalowski ◽  
Tobias Erlbacher

Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully understood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation.


Author(s):  
Vuong Van Cuong ◽  
Tadashi Sato ◽  
Takamichi Miyazaki ◽  
Tetsuya Meguro ◽  
Seiji Ishikawa ◽  
...  

Abstract The reliability of Ni/Nb ohmic contact on n-type 4H-SiC at 500℃ was investigated. The current-voltage characteristics showed that, while the Ni(50)/Nb(50)/4H-SiC sample without applying the CF4:O2 etching process degraded just after 25-hour and lost ohmic behavior after 50-hour aging, the Ni(75)/Nb(25)/4H-SiC contact undergone CF4:O2 surface treatment still showed excellent stability after aging for 100 hours at 500℃. Though X-ray diffraction results indicated that the chemical compounds remained stable during the aging process, transmission electron microscopy showed that there was a redistribution of the chemical compounds at the interface of the contact after 500℃ aging. The depth distribution of the elements and energy dispersive X-ray analyses revealed that the contribution of carbon agglomeration at the interface accounted for the degradation of the sample without applying the etching process. Whereas the well-controlled excess carbon atoms of the contact undergone CF4:O2 treatment ensured the stability of this contact when operating at high-temperature ambient.


2021 ◽  
Vol 119 (24) ◽  
pp. 242104
Author(s):  
Shun Lu ◽  
Manato Deki ◽  
Jia Wang ◽  
Kazuki Ohnishi ◽  
Yuto Ando ◽  
...  
Keyword(s):  

2021 ◽  
Vol 2086 (1) ◽  
pp. 012088
Author(s):  
D A Kudryashov ◽  
A I Baranov ◽  
A V Uvarov ◽  
I A Morozov ◽  
A O Monastyrenko ◽  
...  

Abstract In this work last results on optimization of (p)a-Si:H/p-Si ohmic contact made by PECVD method are presented. A strong effect of growth temperature and trimethylboron flow on charge carriers transport was demonstrated. An optimized (p)a-Si:H layer also was successfully applied as an emitter layer to a heterojunction solar cell fabrication where a measured open circuit voltage of 0.65 V was obtained.


2021 ◽  
Vol 23 (11) ◽  
Author(s):  
Xiangqian Jiang ◽  
Chuncheng Ban ◽  
Ling Li ◽  
Weiping Chen ◽  
Xiaowei Liu
Keyword(s):  

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