scholarly journals Nano-XRF Analysis of Metal Impurities Distribution at PL Active Grain Boundaries During mc-Silicon Solar Cell Processing

2017 ◽  
Vol 7 (1) ◽  
pp. 244-249 ◽  
Author(s):  
Simone Bernardini ◽  
Steve Johnston ◽  
Bradley West ◽  
Tine U. Naerland ◽  
Michael Stuckelberger ◽  
...  
2021 ◽  
Vol 14 (11) ◽  
pp. 115502
Author(s):  
Zechen Hu ◽  
Dehang Lin ◽  
Xuegong Yu ◽  
Christoph Seiffert ◽  
Andrej Kuznetsov ◽  
...  

2009 ◽  
Vol 156-158 ◽  
pp. 387-393 ◽  
Author(s):  
Jasmin Hofstetter ◽  
Jean F. Lelièvre ◽  
Carlos del Cañizo ◽  
Antonio Luque

The eect of slow cooling after dierent high temperature treatments on the in- terstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been in- vestigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous diusion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering eect.


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