Mechanistic understanding of the increased photoactivity of TiO2 nanosheets upon tantalum doping

Doping of Ta5+ into TiO2 replaces Ti4+ to decrease the recombination rate and elongate the electron lifetime due to the formation of shallow electron traps from Ti3+ defects. The elongated electron lifetime increases electron population and photocatalytic activity.

The model of outer radiation belt electron lifetimes based on combined Van Allen Probes and Cluster VLF wave measurements

<p>The flux of highly energetic electrons in the outer radiation belt show a high variability during geomagnetically disturbed conditions. Wave-particle interaction with VLF chorus waves play a significant role in the flux variation of these particles, and quantification of the effects from these interactions is crucially important for accurately modeling the global dynamics of the outer radiation belt and for providing a comprehensive description of electron flux variations over a wide energy range (from the source population of keV electrons to the relativistic core population of the outer radiation belt).  In this study, we use the synthetic model based on the combined database from the Van Allen Probes and Cluster spacecraft VLF measurements (including the recent findings of wave amplitude dependence on geomagnetic latitude, wave normal angle distribution, and variations of wave frequency with latitude) to develop a comprehensive parametric model of electron lifetime in the outer radiation belt as a function of geomagnetic activity, L-shell, and magnetic local time. <span>Results show high local scattering rates during moderate and active conditions</span>, <span>local scattering is higher on the dawn and night side compared to day side, and electron lifetime is short during active conditions. </span></p>

Ferroelectric polyoxometalate-modified nano semiconductor TiO2 for increasing electron lifetime and inhibiting electron recombination in dye-sensitized solar cells

Ferroelectric polyoxometalate Sm is a good electron transfer medium, which can reduce electron-holes recombination and increase electrons lifetime in DSSCs.

Prolonged electron lifetime in sulfur vacancy-rich ZnCdS nanocages by interstitial phosphorus doping for photocatalytic water reduction

Sulfur vacancy-rich ZnCdS nanocages with interstitial P dopant atoms were fabricated. The promoted Fermi level caused by interstitial P doping facilitates the S vacancy level to be an effective electron trapping center, thus enhancing the photocatalytic performance.

Inert basal plane activation of two-dimensional ZnIn2S4via Ni atom doping for enhanced co-catalyst free photocatalytic hydrogen evolution

Doping Ni atoms can trigger the HER activity of inert S atoms on the 2D ZnIn2S4 surface and prolong the electron lifetime.