Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

2007 ◽  
Vol 43 (4) ◽  
pp. 203-206 ◽  
Author(s):  
M. S. Saidov ◽  
B. M. Abdurakhmanov ◽  
L. O. Olimov
Keyword(s):  
Solar Cell ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Thermovoltaic Effect

Influence of ultrathin gahnite anti-reflection coating on the power conversion efficiency of polycrystalline silicon solar cell

2019 ◽  
Vol 31 (3) ◽  
pp. 2308-2319 ◽  
Author(s):  
Gobinath Velu Kaliyannan ◽  
Senthil Velmurugan Palanisamy ◽  
Rajasekar Rathanasamy ◽  
Manivasakan Palanisamy ◽  
Sathish Kumar Palaniappan ◽  
...  
Keyword(s):  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Power Conversion

Photoelectric efficiency enhancement of a polycrystalline silicon solar cell coated with an EVA film containing Eu3+ complex by addition of modified SiO2

RSC Advances ◽  
2016 ◽  
Vol 6 (111) ◽  
pp. 110409-110415 ◽  
Author(s):  
Jin Dong ◽  
Baoping Lin
Keyword(s):  
Solar Cell ◽  
Composite Film ◽  
Conversion Efficiency ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Photoelectric Conversion Efficiency ◽  
Efficiency Enhancement ◽  
Photoelectric Conversion

Modified SiO2 was doped into an EVA film containing a Eu3+ complex and the results show that the fluorescence of the EVA composite film increased, which helped to improve the photoelectric conversion efficiency of the solar cell.

Dolts of Polysilicon for Solar Cell Applications

1986 ◽  
Vol 71 ◽  
Author(s):  
P.K. Mclarty ◽  
Y.I. Huang ◽  
D. E. Ioannou ◽  
S.M. Johnson
Keyword(s):  
Solar Cell ◽  
Grain Boundaries ◽  
Doping Level ◽  
Polycrystalline Silicon ◽  
Schottky Diodes ◽  
Casting Technique ◽  
P Type ◽  
Electron And Hole Traps ◽  
Dlts Spectra

AbstractDLTS was applied to p—type polycrystalline silicon, grown by a casting technique to form ingots with a nominal doping level of ∼1016 acceptors/cmg. Both Schottky diodes and n+p mesa structures were used for the measurements. Very complex DLTS spectra were obtained from diodes that contained electrically active grain boundaries, whereas no traps were detected in areas that did not contain electrically active grain boundaries. Several electron and hole traps were resolved.

Imaging of a Polycrystalline Silicon Solar Cell Using a Laser Terahertz Emission Microscope

2012 ◽  
Vol 5 (11) ◽  
pp. 112301 ◽  
Author(s):  
Hidetoshi Nakanishi ◽  
Shogo Fujiwara ◽  
Kazuhisa Takayama ◽  
Iwao Kawayama ◽  
Hironaru Murakami ◽  
...  
Keyword(s):  
Solar Cell ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
Terahertz Emission
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