Обнаружение термовольтаического эффекта в гетероструктуре на основе теллурида свинца

The thermovoltaic effect was detected in a heterostructure based on a semiconductor material used in medium-temperature thermoelectric converters (PbTe). A voltage of ~0.015 V was generated at constant temperature T = 390 K. At T = 732 K, the voltage was 0.11 V.

Электрические характеристики термовольтаического элемента на основе сульфида самария

The converter of thermal energy into electrical energy based on the thermovoltaic effect is considered. Samarium sulfide (SmS) samples obtained by high-temperature sintering were used as working material. The main electrical characteristics of the thermovoltaic element based on the thermovoltaic effect are determined: volt-ampere characteristic, maximum power, internal resistance. It is shown that the optimal load to obtain maximum power is equal to the internal resistance of the element.

Investigation of Gas-Sensitive Properties of Thin-Film Thermovoltaic Sensor Elements Based on Zinc Oxide

Systematic research on a new type of gas sensor devices based on the thermovoltaic effect in zinc oxide, inhomogeneously doped with impurities of variable valence, is presented in the article. The ZnO–ZnO–Me two-layer sandwich structure, in which the thermovoltaic effect is observed, is synthesized using sol–gel technology from sols by dissolving the inorganic zinc salt in alcohol and adding a surfactant, followed by the mixing and maturation of the sol. The lower layer of the nanostructure is formed from pure zinc oxide by immersing the substrate at ⅔ length in sol and drying. The upper layer of zinc oxide doped with copper or iron is formed by two or three immersions of the other end of the substrate by ⅔ length, followed by drying and annealing. It has been established that, based on the developed sensor device, it is possible to obtain an increased response to gas-analyzers (ethanol being an example).