Modeling of the threshold operation of 1.3-/spl mu/m GaAs-based oxide-confined (InGa)As-GaAs quantum-dot vertical-cavity surface-emitting lasers
2004 ◽
Vol 40
(6)
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pp. 629-639
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2009 ◽
Vol 15
(3)
◽
pp. 743-748
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Keyword(s):
2009 ◽
Vol 15
(3)
◽
pp. 844-849
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