Realization of the quantum Toffoli gate based on a six-level atomic system

In this paper, we propose a scheme for implementing a Toffoli gate in a system with an atom that has six levels in a lambda configuration, interacting with a high-Q cavity containing four modes. Here, we reduce a six-level system into an effective three-level behavior by applying the adiabatic elimination method. Next, we calculate the probabilities of the states of the interest as well as the fidelity. We also study the effects of photonic and atomic decay rates on the evolution of the system which is reasonably less sensitive to decoherence.

Broadband frequency conversion of ultrashort pulses using high-Q metasurface cavities

Frequency conversion of light can be dramatically enhanced using high quality factor (Q-factor) cavities. Unfortunately, the achievable conversion efficiencies and conversion bandwidths are fundamentally limited by the time–bandwidth limit of the cavity, restricting their use in frequency conversion of ultrashort pulses. Here, we propose and numerically demonstrate sum-frequency generation based frequency conversion using a metasurface-based cavity configuration that could overcome this limitation. The proposed experimental configuration takes use of the spatially dispersive responses of periodic metasurfaces supporting collective surface lattice resonances (SLRs), and can be utilized for broadband frequency conversion of ultrashort pulses. We investigate a plasmonic metasurface, supporting a high-Q SLR (Q=500, linewidth of 2 nm) centred near 1000 nm, and demonstrate ~1000-fold enhancements of nonlinear signals. Furthermore, we demonstrate broadband frequency conversion with a pump conversion bandwidth reaching 75 nm, a value that greatly surpasses the linewidth of the studied cavity. Our work opens new avenues to utilize high-Q metasurfaces also for broadband frequency conversion of light.

High Q Dielectric Titanium Tellurite Thick Films on Alumina Substrates for High Frequency Telecommunications

The vital role of high-quality-factor (Q) high-frequency (f) dielectric resonators in the growing microwave telecommunication, satellite broadcasting and intelligent transport systems has long motivated the search for new, small size, and lightweight integrated components and packages, prepared by low cost and sustainable processes. One approach is replacing the currently used bulk ceramic dielectrics by thick films of low-sintering-temperature dielectrics fabricated by affordable processes. Here we demonstrate the fabrication of high-Q TiTe3O8 thick films directly on low loss Al2O3 substrates by electrophoretic deposition using sacrificial carbon layer. Nineteen-micrometre-thick TiTe3O8 films on Al2O3 sintered at 700 °C are found to have a relative permittivity εr of 32 and Q × f > 21,000 GHz. Being thus able to measure and provide for the first time the microwave dielectric properties of these films, our results suggest that TiTe3O8 films on Al2O3 substrates are suitable for microlayer microstrip array applications.