A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS

2005 ◽  
Vol 40 (7) ◽  
pp. 1434-1442 ◽  
Author(s):  
D. Linten ◽  
S. Thijs ◽  
M.I. Natarajan ◽  
P. Wambacq ◽  
W. Jeamsaksiri ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Rf Cmos ◽  
Fully Integrated ◽  
Noise Amplifier ◽  
5 Ghz

scholarly journals A 0.18um CMOS Low Noise Amplifier for 3-5ghz UWB Receivers

2018 ◽  
Vol 7 (3.6) ◽  
pp. 84
Author(s):  
N Malika Begum ◽  
W Yasmeen
Keyword(s):  
Power Supply ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Noise Amplifier ◽  
5 Ghz ◽  
Chebyshev Filter ◽  
Minimum Noise

This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.  

A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications

2010 ◽  
Vol 31 (5) ◽  
pp. 055005
Author(s):  
Zhang Hao ◽  
Li Zhiqun ◽  
Wang Zhigong ◽  
Zhang Li ◽  
Li Wei
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Variable Gain ◽  
Esd Protection ◽  
Noise Amplifier ◽  
5 Ghz
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