Comments on “A Digitally Modulated Polar CMOS Power Amplifier With a 20-MHz Channel Bandwidth”

2009 ◽  
Vol 44 (6) ◽  
pp. 1854-1854
Author(s):  
Paul T. M. van Zeijl ◽  
Manel Collados
2008 ◽  
Vol 43 (10) ◽  
pp. 2251-2258 ◽  
Author(s):  
Amirpouya Kavousian ◽  
David K. Su ◽  
Mohammad Hekmat ◽  
Alireza Shirvani ◽  
Bruce A. Wooley

2009 ◽  
Vol 44 (7) ◽  
pp. 1883-1896 ◽  
Author(s):  
Calogero D. Presti ◽  
Francesco Carrara ◽  
Antonino Scuderi ◽  
Peter M. Asbeck ◽  
Giuseppe Palmisano

2014 ◽  
Vol 23 (08) ◽  
pp. 1450111 ◽  
Author(s):  
U. ESWARAN ◽  
H. RAMIAH ◽  
J. KANESAN ◽  
A. W. REZA

In this paper, a 1 mm × 1 mm fully integrated wideband dual-stage power amplifier (PA) for long-term evolution (LTE) band 1 (1920–1980 MHz) is presented. Fabricated in a 2 μm InGaP/GaAs hetero-junction bipolar transistor (HBT) process, the operating gain is observed to be 31.3 dB. The PA meets the minimum adjacent channel leakage ratio (ACLR) requirement of -30 dBc for LTE with 20 MHz wide channel bandwidth up to an output power of 30 dBm with the aid of a novel dual stage linearizer. Biased at low quiescent current of less than 100 mA with a headroom consumption of 3.5 V, the power added efficiency (PAE) is observed to be 38.29% at 30 dBm. With this high linear output power, the stringent requirement of antenna path loss is nullified. PA serves to be the first reported work to achieve 30 dBm linear output power at supply voltage of 3.5 V.


2017 ◽  
Vol 30 (2) ◽  
pp. 209-221 ◽  
Author(s):  
Aleksandra Djoric ◽  
Natasa Males-Ilic ◽  
Aleksandar Atanaskovic

This paper represents the linearization of the RF power amplifier performed by a new approach that combines two different methods exploiting the modified baseband signals. The signals for linearization in both methods are formed and processed in digital domain. The required modified baseband signals for linearization are products of the second order nonlinearity of a nonlinear system fed by the useful baseband signal. In the first method, adequate part of the modified baseband signal is adjusted in amplitude and polarity and injected at the input and output of the amplifier transistor across the series LC resonant circuit. In the second method, the appropriate modified baseband signal set on the appropriate amplitude and phase modulates the fundamental carrier second harmonic, which is then inserted at the input and output of the amplifier transistor. The effects of the combined linearization method are considered on a single stage power amplifier for quadrature amplitude modulated signals characterized with frequency spacing between spectral components up to 60 MHz for different input power levels, as well as for WCDMA digitally modulated signal.


Author(s):  
Selvakumar Mariappan ◽  
Jagadheswaran Rajendran ◽  
Harikrishnan Ramiah ◽  
Pui-In Mak ◽  
Jun Yin ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document