An 800 MHz-to-3.3 GHz 20-MHz Channel Bandwidth WPD CMOS Power Amplifier For Multiband Uplink Radio Transceivers

2020 ◽  
pp. 1-1
Author(s):  
Selvakumar Mariappan ◽  
Jagadheswaran Rajendran ◽  
Harikrishnan Ramiah ◽  
Pui-In Mak ◽  
Jun Yin ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Channel Bandwidth ◽  
Radio Transceivers

DESIGN OF WIDEBAND LTE POWER AMPLIFIER WITH NOVEL DUAL STAGE LINEARIZER FOR MOBILE WIRELESS COMMUNICATION

2014 ◽  
Vol 23 (08) ◽  
pp. 1450111 ◽  
Author(s):  
U. ESWARAN ◽  
H. RAMIAH ◽  
J. KANESAN ◽  
A. W. REZA
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Supply Voltage ◽  
Path Loss ◽  
Stringent Requirement ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Channel Bandwidth ◽  
Dual Stage

In this paper, a 1 mm × 1 mm fully integrated wideband dual-stage power amplifier (PA) for long-term evolution (LTE) band 1 (1920–1980 MHz) is presented. Fabricated in a 2 μm InGaP/GaAs hetero-junction bipolar transistor (HBT) process, the operating gain is observed to be 31.3 dB. The PA meets the minimum adjacent channel leakage ratio (ACLR) requirement of -30 dBc for LTE with 20 MHz wide channel bandwidth up to an output power of 30 dBm with the aid of a novel dual stage linearizer. Biased at low quiescent current of less than 100 mA with a headroom consumption of 3.5 V, the power added efficiency (PAE) is observed to be 38.29% at 30 dBm. With this high linear output power, the stringent requirement of antenna path loss is nullified. PA serves to be the first reported work to achieve 30 dBm linear output power at supply voltage of 3.5 V.

A Digitally Modulated Polar CMOS Power Amplifier With a 20-MHz Channel Bandwidth

2008 ◽  
Vol 43 (10) ◽  
pp. 2251-2258 ◽  
Author(s):  
Amirpouya Kavousian ◽  
David K. Su ◽  
Mohammad Hekmat ◽  
Alireza Shirvani ◽  
Bruce A. Wooley
Keyword(s):  
Power Amplifier ◽  
Channel Bandwidth ◽  
Digitally Modulated

Design of Predistorter with Efficient Updating Algorithm of Power Amplifier with Memory Effect

2012 ◽  
Vol E95-C (3) ◽  
pp. 382-394
Author(s):  
Yasuyuki OISHI ◽  
Shigekazu KIMURA ◽  
Eisuke FUKUDA ◽  
Takeshi TAKANO ◽  
Daisuke TAKAGO ◽  
...  
Keyword(s):  
Memory Effect ◽  
Power Amplifier ◽  
With Memory

A 60 GHz High Gain Transformer-Coupled Differential Cascode Power Amplifier in 65 nm CMOS

2011 ◽  
Vol E94-C (10) ◽  
pp. 1508-1514
Author(s):  
Jenny Yi-Chun LIU ◽  
Mau-Chung Frank CHANG
Keyword(s):  
Power Amplifier ◽  
High Gain ◽  
60 Ghz

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

2011 ◽  
Vol E94-C (7) ◽  
pp. 1193-1198 ◽  
Author(s):  
Akihiro ANDO ◽  
Yoichiro TAKAYAMA ◽  
Tsuyoshi YOSHIDA ◽  
Ryo ISHIKAWA ◽  
Kazuhiko HONJO
Keyword(s):  
Power Amplifier ◽  
Average Power ◽  
Gan Hemt ◽  
Class F

A High Efficiency Class-E Power Amplifier Over a Wide Power Range Using a Look-Up Table Based Dynamic Biasing Scheme

2015 ◽  
Vol E98.C (4) ◽  
pp. 377-379
Author(s):  
Jonggyun LIM ◽  
Wonshil KANG ◽  
Kang-Yoon LEE ◽  
Hyunchul KU
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Look Up Table ◽  
Dynamic Biasing ◽  
Class E

Design and Measurements of Building Blocks Supporting a 1.9-GHz-Band BiFET MMIC Power Amplifier for WCDMA Handsets

2016 ◽  
Vol E99.C (7) ◽  
pp. 837-848 ◽  
Author(s):  
Kazuya YAMAMOTO ◽  
Takayuki MATSUZUKA ◽  
Miyo MIYASHITA ◽  
Kenichi HORIGUCHI ◽  
Shigeo YAMABE ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Building Blocks
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