Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures

2021 ◽  
pp. 1-1
Author(s):  
Junya Yaita ◽  
Koichi Fukuda ◽  
Atsushi Yamada ◽  
Takuya Iwasaki ◽  
Shu Nakaharai ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Electron Mobility ◽  
Double Heterostructures

Effect of external electric field on multisubband electron mobility in n-V-shaped double quantum well HEMT structure

2020 ◽  
Vol 95 (3) ◽  
pp. 034002
Author(s):  
Ajit K Panda ◽  
Sangeeta K Palo ◽  
Narayan Sahoo ◽  
Trinath Sahu ◽  
Tarini Charan Tripathy
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
External Electric Field ◽  
Electron Mobility ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Hemt Structure

Morphology-Driven Stark Shift Switching in Ge/Si Type-II Heterointerfaces

2014 ◽  
Vol 893 ◽  
pp. 39-44
Author(s):  
Yasuyuki Miyake ◽  
Yuhsuke Yasutake ◽  
Susumu Fukatsu
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Stark Effect ◽  
Stark Shift ◽  
Mode Transition ◽  
Type Ii ◽  
Confinement Potential ◽  
Double Heterostructures ◽  
Stokes Shifts ◽  
Polarity Switch

Morphology-related anomaly was found in the photoluminescence (PL) of Ge/Si type-II double heterostructures with varying Ge coverage. PL Stokes shifts of 2-D Ge wetting layers functioning as a quantum well for holes switched from negative to positive under electric field as Ge coverage crossed 3.7 monolayers, which correlates well with the onset of Stranski-Krastanow growth mode transition. The origin of such shift polarity switch is discussed in terms of the linear Stark effect in an asymmetric confinement potential developing due to 3-D Ge islands.

Sign in / Sign up

Export Citation Format

Share Document