Morphology-Driven Stark Shift Switching in Ge/Si Type-II Heterointerfaces

Morphology-related anomaly was found in the photoluminescence (PL) of Ge/Si type-II double heterostructures with varying Ge coverage. PL Stokes shifts of 2-D Ge wetting layers functioning as a quantum well for holes switched from negative to positive under electric field as Ge coverage crossed 3.7 monolayers, which correlates well with the onset of Stranski-Krastanow growth mode transition. The origin of such shift polarity switch is discussed in terms of the linear Stark effect in an asymmetric confinement potential developing due to 3-D Ge islands.

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Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures

IEEE Electron Device Letters ◽

10.1109/led.2021.3116595 ◽

2021 ◽

pp. 1-1

Author(s):

Junya Yaita ◽

Koichi Fukuda ◽

Atsushi Yamada ◽

Takuya Iwasaki ◽

Shu Nakaharai ◽

...

Keyword(s):

Electric Field ◽

Quantum Well ◽

Electron Mobility ◽

Double Heterostructures

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Two-Colour Mid-Infrared Optical Absorption under Electric Field in an InAs/GaSb-Based Type II and Broken-Gap Quantum Well

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.130-134.4122 ◽

2011 ◽

Vol 130-134 ◽

pp. 4122-4125

Author(s):

X.F. Wei ◽

J.F. Ruan ◽

C.G. Xie ◽

H. Yuan ◽

J. Song

Keyword(s):

Optical Absorption ◽

Electric Field ◽

Quantum Well ◽

Applied Electric Field ◽

Type Ii ◽

Mid Infrared ◽

Material Layer ◽

Broken Gap ◽

Small Overlap

The optical absorptions are calculated in an InAs/GaSb-based type II and broken-gap quantum well under applied electric field. Two absorption peaks were observed through intraband transitions within the same material layer. The absorption induced by the interlayer transition is rather weak due to the small overlap of electron and hole wavefunctions. The optical absorption can be significantly affected by the applied electric field. Our results suggest that InAs/GaSb-based type II and broken-gap QWs can be employed as two-colour photodetectors, which can be controlled by the applied electric field.

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Enhanced Stark Shift in GaAs/AlGaAs Step Quantum Well Under an Applied Electric Field

Chinese Physics Letters ◽

10.1088/0256-307x/12/2/011 ◽

1995 ◽

Vol 12 (2) ◽

pp. 102-105 ◽

Cited By ~ 3

Author(s):

Ma Jianwei ◽

Chen Zhenghao ◽

Cui Dafu ◽

Yuan Zhenyu ◽

Yang Guozhen

Keyword(s):

Electric Field ◽

Quantum Well ◽

Applied Electric Field ◽

Stark Shift

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Quantum Confinement Stark Effect of Different Gainnas Quantum Well Structures

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.773.622 ◽

2013 ◽

Vol 773 ◽

pp. 622-627

Author(s):

Ying Ning Qiu ◽

Wei Sheng Lu ◽

Stephane Calvez

Keyword(s):

Electric Field ◽

Quantum Well ◽

Quantum Wells ◽

External Electric Field ◽

Quantum Confinement ◽

Stark Effect ◽

Band Gap Energy ◽

Electron Effective Mass ◽

Coupled Quantum Wells ◽

Quantum Well Structures

The quantum confinement Stark effect of three types of GaInNAs quantum wells, namely single square quantum well, stepped quantum wells and coupled quantum wells, is investigated using the band anti-crossing model. The comparison between experimental observation and modeling result validate the modeling process. The effects of the external electric field and localized N states on the quantized energy shifts of these three structures are compared and analyzed. The external electric field applied to the QW not only changes the potential profile but also modulates the localized N states, which causes band gap energy shifts and increase of electron effective mass.

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Oscillator strength and quantum-confined Stark effect of excitons in a thin PbS quantum disk

International Journal of Modern Physics B ◽

10.1142/s0217979217502666 ◽

2018 ◽

Vol 32 (01) ◽

pp. 1750266 ◽

Cited By ~ 3

Author(s):

A. Oukerroum ◽

M. El-Yadri ◽

A. El Aouami ◽

E. Feddi ◽

F. Dujardin ◽

...

Keyword(s):

Electric Field ◽

Oscillator Strength ◽

Stark Effect ◽

State Energy ◽

Strong Dependence ◽

Stark Shift ◽

Quantum Confined Stark Effect ◽

Quantum Disk ◽

Trial Wavefunction ◽

Quantum Confined

In this paper, we report a study of the effect of a lateral electric field on a quantum-confined exciton in a thin PbS quantum disk. Our approach was performed in the framework of the effective mass theory and adiabatic approximation. The ground state energy and the stark shift were determined by using a variational method with an adequate trial wavefunction, by investigating a 2D oscillator strength under simultaneous consideration of the geometrical confinement and the electric field strength. Our results showed a strong dependence of the exciton binding and the Stark shift on the disk dimensions in both axial and longitudinal directions. On the other hand, our results also showed that the Stark shift’s dependence on the electric field is not purely quadratic but the linear contribution is also important and cannot be neglected, especially when the confinement gets weaker.

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