Gas-source MBE Growth Of III-V Compound Semiconductors

LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics ◽

10.1109/leosst.1991.638918 ◽

2005 ◽

Author(s):

C.W. Tu ◽

H.Q. Hou ◽

B.W. Liang ◽

T.P. Chin ◽

M.C. Ho

Keyword(s):

Compound Semiconductors ◽

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Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00926-8 ◽

1997 ◽

Vol 175-176 ◽

pp. 150-155 ◽

Author(s):

K. Iwata ◽

H. Asahi ◽

K. Asami ◽

S. Gonda

Keyword(s):

Gas Source Mbe ◽

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Gas source MBE growth of TlInGaAs/InP DH structures for the application to WDM optical fiber communication systems

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)00711-4 ◽

2001 ◽

Vol 227-228 ◽

pp. 307-312 ◽

Author(s):

H. Asahi ◽

K. Konishi ◽

O. Maeda ◽

A. Ayabe ◽

H.J. Lee ◽

...

Keyword(s):

Optical Fiber ◽

Communication Systems ◽

Optical Fiber Communication ◽

Fiber Communication ◽

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Gas source MBE growth of InP under in-rich conditions

10.1109/edms.1994.863850 ◽

2005 ◽

Author(s):

Tsuen-Lin Lee ◽

Jin-Shang Liu ◽

Hao-Hsiung Lin

Keyword(s):

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Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

Superlattices and Microstructures ◽

10.1006/spmi.1998.0678 ◽

1999 ◽

Vol 25 (1-2) ◽

pp. 477-479 ◽

Author(s):

J.L. Liu ◽

S.J. Cai ◽

G.L. Jin ◽

Y.S. Tang ◽

K.L. Wang

Keyword(s):

Si Substrate ◽

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New semiconductors TlInGaP and their gas source MBE growth

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00936-0 ◽

1997 ◽

Vol 175-176 ◽

pp. 1195-1199 ◽

Author(s):

H. Asahi ◽

M. Fushida ◽

K. Yamamoto ◽

K. Iwata ◽

H. Koh ◽

...

Keyword(s):

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Gas source MBE growth of TlInGaP and TlInGaAs for the application to temperature-insensitive wavelength semiconductor lasers

Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) ◽

10.1109/islc.1998.734199 ◽

2002 ◽

Author(s):

H. Asahi ◽

K. Takenaka ◽

H. Koh ◽

K. Asami ◽

S. Gonda ◽

...

Keyword(s):

Semiconductor Lasers ◽

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A reflection high-energy electron diffraction study of Si surfaces during gas source MBE growth from disilane

Applied Surface Science ◽

10.1016/0169-4332(92)90400-r ◽

1992 ◽

Vol 60-61 ◽

pp. 92-98 ◽

Author(s):

S.M. Mokler ◽

W.K. Liu ◽

N. Ohtani ◽

B.A. Joyce

Keyword(s):

Electron Diffraction ◽

Diffraction Study ◽

Electron Diffraction Study ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

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Gas-source MBE growth of strain-relaxed Si1−xCx on Si(100) substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2012.12.152 ◽

2013 ◽

Vol 378 ◽

pp. 212-217 ◽

Author(s):

Keisuke Arimoto ◽

Shoichiro Sakai ◽

Hiroshi Furukawa ◽

Junji Yamanaka ◽

Kiyokazu Nakagawa ◽

...

Keyword(s):

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Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.464 ◽

1991 ◽

Vol 30 (Part 1, No. 3) ◽

pp. 464-465 ◽

Author(s):

Adarsh Sandhu ◽

Toshio Fujii ◽

Hideyasu Ando ◽

Tsuyoshi Takahashi ◽

Hideaki Ishikawa ◽

...

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Carbon Doped ◽

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Gas source MBE growth and doping characteristics of AlInP on GaAs

Materials Science and Engineering B ◽

10.1016/j.mseb.2006.03.026 ◽

2006 ◽

Vol 131 (1-3) ◽

pp. 49-53 ◽

Author(s):

Y. Gu ◽

Y.G. Zhang ◽

H. Li ◽

A.Z. Li ◽

C. Zhu

Keyword(s):

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