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GaN HEMT MMIC Doherty Power Amplifier With High Gain and High PAE
IEEE Microwave and Wireless Components Letters
◽
10.1109/lmwc.2015.2390536
◽
2015
◽
Vol 25
(3)
◽
pp. 187-189
◽
Cited By ~ 11
Author(s):
Yunsik Park
◽
Juyeon Lee
◽
Seunghoon Jee
◽
Seokhyeon Kim
◽
Cheol Ho Kim
◽
...
Keyword(s):
Power Amplifier
◽
High Gain
◽
Gan Hemt
◽
Doherty Power Amplifier
Download Full-text
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Single and dual input packaged 5.5–6.5GHz, 20W, Quasi-MMIC GaN-HEMT Doherty Power Amplifier
2017 IEEE MTT-S International Microwave Symposium (IMS)
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10.1109/mwsym.2017.8058804
◽
2017
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Cited By ~ 7
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GaN‐HEMT asymmetric three‐way Doherty power amplifier using GPD
IET Microwaves Antennas & Propagation
◽
10.1049/iet-map.2018.5464
◽
2018
◽
Vol 12
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◽
pp. 2115-2121
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◽
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A 83-W, 51% GaN HEMT Doherty power amplifier for 3.5-GHz-band LTE base stations
2016 46th European Microwave Conference (EuMC)
◽
10.1109/eumc.2016.7824407
◽
2016
◽
Cited By ~ 2
Author(s):
Katsuya Kato
◽
Shinichi Miwa
◽
Eri Teranishi
◽
Naoki Kosaka
◽
Kazunobu Fujii
◽
...
Keyword(s):
Power Amplifier
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Base Stations
◽
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◽
Doherty Power Amplifier
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Linear X‐band GaN HEMT transformer‐based Doherty power amplifier
Electronics Letters
◽
10.1049/el.2015.4464
◽
2016
◽
Vol 52
(15)
◽
pp. 1342-1343
◽
Cited By ~ 5
Author(s):
S.‐Y. Lee
◽
J. Woo
◽
S. Park
◽
Y. Kwon
Keyword(s):
Power Amplifier
◽
Gan Hemt
◽
X Band
◽
Doherty Power Amplifier
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Compact Load Network for GaN-HEMT Doherty Power Amplifier IC Using Left-Handed and Right-Handed Transmission Lines
IEEE Microwave and Wireless Components Letters
◽
10.1109/lmwc.2017.2661706
◽
2017
◽
Vol 27
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◽
pp. 293-295
◽
Cited By ~ 6
Author(s):
Hwiseob Lee
◽
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Keyword(s):
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◽
Transmission Lines
◽
Gan Hemt
◽
Left Handed
◽
Doherty Power Amplifier
◽
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Design of a Concurrent Dual-Band 1.8–2.4-GHz GaN-HEMT Doherty Power Amplifier
IEEE Transactions on Microwave Theory and Techniques
◽
10.1109/tmtt.2012.2189120
◽
2012
◽
Vol 60
(6)
◽
pp. 1840-1849
◽
Cited By ~ 90
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◽
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◽
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◽
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◽
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◽
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Power Amplifier
◽
Dual Band
◽
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◽
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Study of the GaN HEMT Doherty Power Amplifier distortion
2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC)
◽
10.1109/inmmic.2014.6815112
◽
2014
◽
Cited By ~ 3
Author(s):
Luis C. Nunes
◽
Pedro M. Cabral
◽
Jose C. Pedro
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Power Amplifier
◽
Gan Hemt
◽
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Novel design of a concurrent tri-band GaN-HEMT Doherty power amplifier
2012 Asia Pacific Microwave Conference Proceedings
◽
10.1109/apmc.2012.6421599
◽
2012
◽
Cited By ~ 14
Author(s):
Xuan Anh Nghiem
◽
Renato Negra
Keyword(s):
Power Amplifier
◽
Gan Hemt
◽
Doherty Power Amplifier
◽
Novel Design
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2.6 GHz GaN-HEMT Doherty power amplifier integrated circuit with 55.5% efficiency based on a compact load network
2017 IEEE MTT-S International Microwave Symposium (IMS)
◽
10.1109/mwsym.2017.8058691
◽
2017
◽
Cited By ~ 2
Author(s):
Hwiseob Lee
◽
Wonseob Lim
◽
Jongseok Bae
◽
Wooseok Lee
◽
Hyunuk Kang
◽
...
Keyword(s):
Power Amplifier
◽
Integrated Circuit
◽
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◽
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◽
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High-Gain AlGaN/GaN HEMT Single Chip E-Band Power Amplifier MMIC with 30 dBm Output Power
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
◽
10.1109/csics.2015.7314510
◽
2015
◽
Cited By ~ 4
Author(s):
Erdin Ture
◽
Dirk Schwantuschke
◽
Axel Tessmann
◽
Sandrine Wagner
◽
Peter Bruckner
◽
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Output Power
◽
Power Amplifier
◽
High Gain
◽
Single Chip
◽
Gan Hemt
◽
Band Power
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