An Ultra-Compact W-band Front-End with Coupled-Line-Based Matching Network Reused T/R Switch achieving 13.4 dBm Psat and <2 dB Switch Loss in 65-nm CMOS Technology

Author(s):  
Jiawen Wang ◽  
Wei Zhu ◽  
Ruitao Wang ◽  
Yan Wang
Author(s):  
Yongrong Shi ◽  
Wenjie Feng ◽  
Hui Wang ◽  
Shichao Zheng ◽  
Ming Zhou ◽  
...  

Author(s):  
Mingchao Wang ◽  
Jianqin Deng ◽  
Dinghong Jia ◽  
Mo Wang ◽  
Zhaoyang Liu
Keyword(s):  
W Band ◽  

2013 ◽  
Vol 475-476 ◽  
pp. 1633-1637
Author(s):  
Seung Yong Bae ◽  
Jong Do Lee ◽  
Eun Ju Choe ◽  
Gil Cho Ahn

This paper presents a low distortion analog front-end (AFE) circuit to process electret microphone output signal. A source follower is employed for the input buffer to interface electret microphone directly to the IC with level shifting. A single-ended to differential converter with output common-mode control is presented to compensate the common-mode variation resulted from gate to source voltage variation in the source follower. A replica stage is adopted to control the output bias voltage of the single-ended to differential converter. The prototype AFE circuit fabricated in a 0.35μm CMOS technology achieves 68.2dB peak SNDR and 79.9dB SFDR over an audio signal bandwidth of 20kHz with 2.5V supply while consuming 1.05mW.


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