5.0 to 10.6 GHz 0.18 µm CMOS power amplifier with excellent group delay for UWB applications

2015 ◽  
Author(s):  
H. Mosalam ◽  
A. Allam ◽  
H. Jia ◽  
A. Abdelrahman ◽  
Takana Kaho ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Group Delay ◽  
Uwb Applications

Low Group Delay 3.1–10.6 GHz CMOS Power Amplifier for UWB Applications

2012 ◽  
Vol 22 (1) ◽  
pp. 41-43 ◽  
Author(s):  
Rohana Sapawi ◽  
Ramesh K. Pokharel ◽  
Sohiful A. Z. Murad ◽  
Awinash Anand ◽  
Nishal Koirala ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Group Delay ◽  
Uwb Applications

scholarly journals High Efficiency, Good phase linearity 0.18 µm CMOS Power Amplifier for MBAN-UWB Applications

2021 ◽  
Vol 12 (3) ◽  
pp. 131-138
Author(s):  
Hamed Mosalam ◽  
Ahmed Gadallah
Keyword(s):  
Power Amplifier ◽  
Group Delay ◽  
High Efficiency ◽  
Optimization Technique ◽  
Wide Band ◽  
Area Network ◽  
Output Stage ◽  
Power Added Efficiency ◽  
Uwb Applications ◽  
Delay Variation

This paper presents the design of 3.1-10.6 GHz class AB power amplifier (PA) suitable for medical body area network (MBAN) Ultra-Wide Band (UWB) applications in TSMC 0.18 µm technology. An optimization technique to simultaneously maximize power added efficiency(PAE) and minimize group delay variation is employed. Source and Load-pull contours are used to design inter and output stage matching circuits. The post-layout simulation results indicated that the designed PA has a maximum PAE of 32 % and an output 1-dB compression of 11 dBm at 4 GHz. In addition, a small group delay variation of ± 50 ps was realized over the whole required frequency band . Moreover, the proposed PA has small signal power gain (S21) of 12.5 dB with ripple less than 1.5 dB over the frequency range between 3.1 GHz to 10.6 GHz, while consuming 36 mW.

scholarly journals A CPW-Fed Dual-Band-Notched Antenna with Sharp Skirt Selectivity for UWB Applications

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Dacheng Dong ◽  
Shaojian Chen ◽  
Zhouying Liao ◽  
Gui Liu
Keyword(s):  
Group Delay ◽  
Coplanar Waveguide ◽  
Dual Band ◽  
Back Surface ◽  
Radiation Patterns ◽  
Uwb Antenna ◽  
Ieee 802.11A ◽  
Notched Band ◽  
Measurement Results ◽  
Uwb Applications

A coplanar waveguide- (CPW-) fed dual-band-notched antenna with sharp skirt selectivity for ultrawideband (UWB) applications is presented. The proposed antenna is composed of a radiant patch with a C-shaped slot and a C-shaped stub on the back surface of the substrate. By using the C-shaped slot and the C-shaped stub, dual-band-notched characteristics can be generated. In this way, a more practical and effective approach to design an UWB antenna with sharp notched-band-edge selectivity is developed. The measurement results show dual notched bands of 4.96–5.42 GHz and 5.71–5.91 GHz, which can reject the interference between IEEE 802.11a bands (5.15–5.35 GHz and 5.725–5.825 GHz) and UWB systems. The fabricated antenna shows good omnidirectional radiation patterns with acceptable gain and group delay.

Low power, low group delay MB-OFDM UWB CMOS power amplifier using current-reused technique

2011 ◽  
Author(s):  
R. Sapawi ◽  
R.K Pokharel ◽  
S.A.Z. Murad ◽  
D.A.A. Mat ◽  
H. Kanaya ◽  
...  
Keyword(s):  
Low Power ◽  
Power Amplifier ◽  
Group Delay

Low group delay variation 3-10 GHz 65 nm CMOS stacked power amplifier with 18.1 dBm peak 1 dB compression output power

2018 ◽  
Vol 60 (2) ◽  
pp. 400-405
Author(s):  
David Polge ◽  
Anthony Ghiotto ◽  
Eric Kerhervé ◽  
Pascal Fabre
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Group Delay ◽  
Delay Variation

scholarly journals Compact Integrated Bluetooth UWB Antenna with Quadruple Bandnotched Characteristics

2015 ◽  
Vol 5 (6) ◽  
pp. 1433
Author(s):  
Rekha P Labade ◽  
Shankar B Deosarkar ◽  
Narayan Pisharoty
Keyword(s):  
Time Domain ◽  
Group Delay ◽  
Directional Pattern ◽  
Good Time ◽  
Uwb Antenna ◽  
Half Wavelength ◽  
Quarter Wavelength ◽  
Uwb Applications

In this paper,a compact printed dualband antenna for Bluetooth and UWB applications with WiMax(3.3-3.7 GHz), C-band satellite downlink(3.7-4.2GHz), WLAN(5.15-5.825GHz) and DSRC(5.5-5.925GHz) bandnotched characteristics is proposed and investigated. By etching two half-wavelength L-shaped slots in the radiating patch and an inverted U-shaped slot in the microstrip feedline quadruple bandnotched characteristics is obtained. Further, by embedding quarter wavelength parasitic strip at two edges of U-shaped radiating patch dualband characteristics with desired bandwidth is obtained. the proposed antenna is designed and fabricated on a FR4 substrate of dimensions 24mm X 35mm that operates over a 2.4-11GHz with S11<-10dB except over notch bands of 3.3-3.7GHz, 3.7-4.2GHz,5.15-5.625GHz and 5.625-6GHz. Directional pattern in E-plane and nearly omnidirectional pattern in H-plane are observed over a UWB band except at desired bandnotched freqencies. Less variation in group delay and pulse deformation shows good time domain characteristics. In addition, the structure exhibits stable gain over the desired band.

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