A 3.5/5.9-GHz dual-band output matching network for an efficiency-optimized multiband power amplifier

Author(s):  
Allison Duh ◽  
Sushia Rahimizadeh ◽  
Taylor Barton ◽  
Zoya Popovic
2018 ◽  
Vol 60 (7) ◽  
pp. 1672-1675
Author(s):  
Wen‐Jie Lin ◽  
Po‐Shun Huang ◽  
Jen‐Hao Cheng ◽  
Jeng‐Han Tsai ◽  
Hamed Alsuraisry ◽  
...  

2015 ◽  
Vol 57 (7) ◽  
pp. 1597-1600 ◽  
Author(s):  
Qian-Fu Cheng ◽  
Hai-Peng Fu ◽  
Shou-Kui Zhu ◽  
Jian-Guo Ma

2014 ◽  
Vol 60 (2) ◽  
pp. 139-144 ◽  
Author(s):  
Ritabrata Bhattacharya ◽  
Robin Gupta ◽  
Ananjan Basu ◽  
Karun Rawat ◽  
Shiban K. Koul

2011 ◽  
Vol 47 (11) ◽  
pp. 659 ◽  
Author(s):  
Y. Yoon ◽  
H. Kim ◽  
J. Cha ◽  
O. Lee ◽  
H.S. Kim ◽  
...  

Electronics ◽  
2022 ◽  
Vol 11 (1) ◽  
pp. 144
Author(s):  
Xiaopan Chen ◽  
Yongle Wu ◽  
Weimin Wang

This study presents a dual-band power amplifier (PA) with two output ports using a simplified three-port, frequency-dividing matching network. The dual-band, dual-output PA could amplify a dual-band signal with one transistor, and the diplexer-like output matching network (OMN) divided the two bands into different output ports. A structure consisting of a λ/4 open stub and a λ/4 transmission line was applied to restrain undesired signals, which made each branch equivalent to an open circuit at another frequency. A three-stub design reduced the complexity of the OMN. Second-order harmonic impedances were tuned for better efficiency. The PA was designed with a 10-W gallium nitride high electron mobility transistor (GaN HEMT). It achieved a drain efficiency (DE) of 55.84% and 53.77%, with the corresponding output power of 40.22 and 40.77 dBm at 3.5 and 5.0 GHz, respectively. The 40%-DE bandwidths were over 200 MHz in the two bands.


2021 ◽  
Vol 31 (1) ◽  
pp. 41-44
Author(s):  
Tianyi Wang ◽  
Huizhen Jenny Qian ◽  
Bingzheng Yang ◽  
Xun Luo

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