Evaluation of lifetime degradation caused by oxygen precipitation combined with metal contamination in Cz-Si for solar cells

2018 ◽  
Author(s):  
Kouhei Onishi ◽  
Takuto Kojima ◽  
Kousuke Kinoshita ◽  
Yoshio Ohshita ◽  
Atsushi Ogura
Keyword(s):  
Solar Cells ◽  
Metal Contamination ◽  
Oxygen Precipitation

Lifetime Degradation by Oxygen Precipitation Combined with Metal Contamination in Czochralski Silicon for Solar Cells

2019 ◽  
Vol 8 (4) ◽  
pp. Q72-Q75 ◽  
Author(s):  
Kohei Onishi ◽  
Kosuke Kinoshita ◽  
Takuto Kojima ◽  
Yoshio Ohshita ◽  
Atsushi Ogura
Keyword(s):  
Solar Cells ◽  
Metal Contamination ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Effects of Metal Contamination with Oxygen Precipitateson Lifetime Degradation in Cz-Si for Solar Cells

2018 ◽  
Author(s):  
K. Onishi ◽  
T. Kojima ◽  
K. Kinoshita ◽  
Y. Ohshita ◽  
A. Ogura
Keyword(s):  
Solar Cells ◽  
Metal Contamination

Effect of Oxygen Precipitation in Silicon Wafer on Electrical Characteristics of Fully Ion-Implanted n-Type PERT Solar Cells

2019 ◽  
Vol 8 (10) ◽  
pp. P596-P601 ◽  
Author(s):  
Katsuto Tanahashi ◽  
Tomihisa Tachibana ◽  
Koji Sueoka ◽  
Masaaki Moriya ◽  
Yasuhiro Kida ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Wafer ◽  
Electrical Characteristics ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen ◽  
Ion Implanted

EBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells

2012 ◽  
Vol 725 ◽  
pp. 129-132 ◽  
Author(s):  
Takashi Sameshima ◽  
Naoto Miyazaki ◽  
Yuki Tsuchiya ◽  
Tomihisa Tachibana ◽  
Yoshio Ohshita ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Contamination ◽  
Energy Levels ◽  
Multicrystalline Silicon ◽  
Etch Pits ◽  
Annealing Temperatures ◽  
Metal Impurities ◽  
Recombination Centers ◽  
Misorientation Angles

Interactions between intra-grain defects and metal impurities in multicrystalline silicon (mc-Si) were evaluated. After metal contaminations, EBIC contrasts at > 1.5o SA-GBs were more enhanced than those at Ni/1000 oC > Ni/600 oC. These results might attribute to Fe atoms form deeper energy levels of recombination centers than Ni atoms and the gettering abilities at SA-GBs depend on the misorientation angles. Many dark spots were observed in EBIC images in the Ni/600 oC. Since the dark spots corresponded to the etch pits, the dark spots might be dislocations decorated with Ni. The gettering abilities of SA-GBs depended on the misorientaion angles, and the recombination properties at SA-GBs and dark spots, such as small defects after metal contamination were different by annealing temperatures and the types of metal impurities.

Correlation of the LeTID amplitude to the Aluminium bulk concentration and Oxygen precipitation in PERC solar cells

2018 ◽  
Vol 187 ◽  
pp. 176-188 ◽  
Author(s):  
Matthias Wagner ◽  
Franziska Wolny ◽  
Melanie Hentsche ◽  
Andreas Krause ◽  
Lamine Sylla ◽  
...  
Keyword(s):  
Solar Cells ◽  
Bulk Concentration ◽  
Oxygen Precipitation

scholarly journals Impact of Metal Contamination in Silicon Solar Cells

2011 ◽  
Vol 21 (5) ◽  
pp. 879-890 ◽  
Author(s):  
Gianluca Coletti ◽  
Paula C. P. Bronsveld ◽  
Giso Hahn ◽  
Wilhelm Warta ◽  
Daniel Macdonald ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Contamination ◽  
Silicon Solar Cells

Effect of oxygen precipitation on the performance of Czochralski silicon solar cells

2011 ◽  
Vol 95 (11) ◽  
pp. 3148-3151 ◽  
Author(s):  
Lin Chen ◽  
Xuegong Yu ◽  
Peng Chen ◽  
Peng Wang ◽  
Xin Gu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Effect Of Oxygen
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