Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect parameters have been proposed. In this paper the transient temperature, thermal stress and point defect distributions are simulated for 300 mm Czochralski growth of the whole crystal including cone and cylindrical growth phases. Simulations with 12 different published point defect parameter sets are compared to the experimentally measured interstitial–vacancy boundary. The results are evaluated for standard and adjusted parameter sets and generally the best agreement in the whole crystal is found for models considering the effect of thermal stress on the equilibrium point defect concentration.
Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal