Emission Intensity Improvement of InGaN Ultraviolet Light-Emitting Diodes Grown on Wet-Etched Sapphire Substrates

2007 ◽  
Author(s):  
Chang-Chi Pan ◽  
Chi-Hsun Hsieh ◽  
Jen-Inn Chyi
Keyword(s):  
Ultraviolet Light ◽  
Emission Intensity ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Ultraviolet Light Emitting Diodes

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

2011 ◽  
Vol 4 (9) ◽  
pp. 092102 ◽  
Author(s):  
Myunghee Kim ◽  
Takehiko Fujita ◽  
Shinya Fukahori ◽  
Tetsuhiko Inazu ◽  
Cyril Pernot ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Patterned Sapphire Substrates

InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates

CrystEngComm ◽  
2010 ◽  
Vol 12 (10) ◽  
pp. 3152 ◽  
Author(s):  
Pekka T. Törmä ◽  
Muhammad Ali ◽  
Olli Svensk ◽  
Sami Suihkonen ◽  
Markku Sopanen ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Patterned Sapphire Substrates
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