Compact Modelling of Single Event Transient in Bulk MOSFET for SPICE: Application to Elementary Circuit

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2018.8551633 ◽

2018 ◽

Author(s):

Neil Rostand ◽

Sebastien Martinie ◽

Joris Lacord ◽

Olivier Rozeau ◽

Olivier Billoint ◽

...

Keyword(s):

Single Event ◽

Single Event Transient ◽

Elementary Circuit

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Single Event Transient (SET) Mitigation Circuits with Immune Leaf Nodes

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2021.3051846 ◽

2021 ◽

pp. 1-1

Author(s):

Faisal Mustafa Sajjade ◽

Neeraj Kumar Goyal ◽

B.K.S.V.L Varaprasad

Keyword(s):

Single Event ◽

Single Event Transient

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Impact of displacement damage on single event transient charge collection in SiGe HBTs

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2019.05.098 ◽

2019 ◽

Vol 938 ◽

pp. 29-35 ◽

Author(s):

Jia-nan Wei ◽

Chao-hui He ◽

Pei Li ◽

Yong-hong Li ◽

Hong-xia Guo

Keyword(s):

Charge Collection ◽

Single Event ◽

Single Event Transient ◽

Displacement Damage

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Single event transient characterisation of analog IC's for ESA's satellites

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) ◽

10.1109/radecs.1999.858650 ◽

2003 ◽

Author(s):

R. Harboe-Sorensen ◽

F.X. Guerre ◽

H. Constans ◽

J. van Dooren ◽

G. Berger ◽

...

Keyword(s):

Single Event ◽

Single Event Transient

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Single event transient (SET) sensitivity of radiation hardened and COTS voltage comparators

2000 IEEE Radiation Effects Data Workshop. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.00TH8527) ◽

10.1109/redw.2000.896269 ◽

2002 ◽

Author(s):

R. Koga ◽

S.H. Crain ◽

K.B. Crawford ◽

S.C. Moss ◽

S.D. LaLumondiere ◽

...

Keyword(s):

Single Event ◽

Single Event Transient ◽

Radiation Hardened

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Single-event transient (SET) characterization of a LM119 voltage comparator: an approach to SET model validation using a pulsed laser

RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605) ◽

10.1109/radecs.2001.1159318 ◽

2005 ◽

Author(s):

S. Buchner ◽

D. McMorrow ◽

A. Sternberg ◽

L. Massengill ◽

R.L. Pease ◽

...

Keyword(s):

Model Validation ◽

Pulsed Laser ◽

Single Event ◽

Single Event Transient ◽

Voltage Comparator

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Investigation of a layout technique for single-event transient mitigation

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict.2016.7998689 ◽

2016 ◽

Author(s):

Luo Sheng ◽

He Wei ◽

Zhang Zhun ◽

He Lingxiang ◽

Cao Jianmin ◽

...

Keyword(s):

Single Event ◽

Single Event Transient ◽

Layout Technique

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Towards a single event transient hardness assurance methodology

RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605) ◽

10.1109/radecs.2001.1159305 ◽

2005 ◽

Author(s):

R. Marec ◽

C. Chatry ◽

P. Adell ◽

O. Mion ◽

C. Barillot ◽

...

Keyword(s):

Single Event ◽

Single Event Transient

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Single Event Transient Pulses Fault Injection Model based on LET for Circuit-Level Simulation

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict49897.2020.9278217 ◽

2020 ◽

Author(s):

Chang-Qing Xu ◽

Yi Liu ◽

Xiao-Dong Weng ◽

Zhi-Bing Li ◽

Yin-Tang Yang

Keyword(s):

Fault Injection ◽

Single Event ◽

Single Event Transient ◽

Model Based ◽

Injection Model

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Single-Event Transient Case Study for System-Level Radiation Effects Analysis

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2021.3059174 ◽

2021 ◽

pp. 1-1

Author(s):

Michael J. Campola ◽

Rebekah A. Austin ◽

Edward P. Wilcox ◽

Hak S. Kim ◽

Raymond L. Ladbury ◽

...

Keyword(s):

Radiation Effects ◽

System Level ◽

Single Event ◽

Single Event Transient ◽

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TCAD based Investigation of Single Event Transient Effect in Double Channel AlGaN/GaN HEMT

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2021.3103238 ◽

2021 ◽

pp. 1-1

Author(s):

Shreyasi Das ◽

Vandana Kumari ◽

Khushwant Sehra ◽

Mridula Gupta ◽

Manoj Saxena

Keyword(s):

Single Event ◽

Single Event Transient ◽

Transient Effect ◽

Gan Hemt ◽

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