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Carrier Transport in a Two-Dimensional Topological Insulator Nanoribbon in the Presence of Vacancy Defects.
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
◽
10.1109/sispad.2018.8551720
◽
2018
◽
Author(s):
Sabyasachi Tiwari
◽
Maarten L. Van de Put
◽
Bart Soree
◽
William G. Vandenberghe
Keyword(s):
Topological Insulator
◽
Carrier Transport
◽
Two Dimensional
◽
Vacancy Defects
Download Full-text
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All-electric spin modulator based on a two-dimensional topological insulator
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◽
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Topological Insulator
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Two Dimensional
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Temperature dependence of the resistance of a two-dimensional topological insulator in a HgTe quantum well
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◽
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◽
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◽
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◽
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◽
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◽
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◽
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◽
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