Two-dimensional analytical sub-threshold modeling and simulation of Gate Material Engineered HEMT for enhanced carrier transport Efficiency

2007 ◽  
Author(s):  
Sona P. Kumar ◽  
Anju Agrawal ◽  
Rishu Chaujar ◽  
Mridula Gupta ◽  
R.S. Gupta
Keyword(s):  
Modeling And Simulation ◽  
Carrier Transport ◽  
Two Dimensional ◽  
Transport Efficiency ◽  
Threshold Modeling

Hot Carrier Transport in SiGe/Si Two-Dimensional Hole Gases

1996 ◽  
pp. 449-452 ◽  
Author(s):  
G. Brunthaler ◽  
G. Bauer ◽  
G. Braithwaite ◽  
N. L. Mattey ◽  
P. Phillips ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Two Dimensional ◽  
Hot Carrier

scholarly journals Efficient Interlayer Exciton Transport in Two-Dimensional Metal-Halide Perovskites.

2020 ◽  
Author(s):  
Alvaro J Magdaleno ◽  
Michael Seitz ◽  
Michel Frising ◽  
Ana Herranz de la Cruz ◽  
Antonio I. Fernández-Domínguez ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Energy Transport ◽  
Diffusion Length ◽  
Charge Carrier Transport ◽  
Two Dimensional ◽  
Exciton Transport ◽  
Halide Perovskites ◽  
Excitonic Energy

We present transient microscopy measurements of interlayer energy transport in (PEA)<sub>2</sub>PbI<sub>4</sub> perovskite. We find efficient interlayer exciton transport (0.06 cm<sup>2</sup>/s), which translates into a diffusion length that exceeds 100 nm and a sub-ps timescale for energy transfer. While still slower than in-plane exciton transport (0.2 cm<sup>2</sup>/s), our results show that excitonic energy transport is considerably less anisotropic than charge-carrier transport for 2D perovskites.

scholarly journals Analysis of base characteristics of trench gate field termination IGBT

2021 ◽  
Vol 237 ◽  
pp. 02023
Author(s):  
Bo Wang
Keyword(s):  
Coordinate System ◽  
Experimental Verification ◽  
Carrier Transport ◽  
Model Analysis ◽  
Bipolar Transistor ◽  
Two Dimensional ◽  
Base Region ◽  
Dimensional Effect ◽  
Insulated Gate Bipolar Transistor ◽  
Gate Structure

Trench gate structure represents the latest structure of Insulated Gate Bipolar Transistor(IGBT). Because there are great differences in model analysis coordinate system and carrier transport between trench gate structure and planar gate structure, the modeling method using planar gate structure will inevitably have great deviation. Based on the characteristics of trench gate structure and model analysis coordinate system, the base region is divided into PNP and PIN by considering the two-dimensional effect of carriers. According to whether the trench of PIN part can be covered by depletion layer of PNP part, the specific base region current is analyzed. Finally, simulation and experimental verification are carried out.

scholarly journals Excitation to defect-bound band edge states in two-dimensional semiconductors and its effect on carrier transport

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Dan Wang ◽  
Dong Han ◽  
Damien West ◽  
Nian-Ke Chen ◽  
Sheng-Yi Xie ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Band Edge ◽  
Two Dimensional ◽  
Edge States

Unveiling hot carrier relaxation and carrier transport mechanisms in quasi-two-dimensional layered perovskites

2020 ◽  
Vol 8 (47) ◽  
pp. 25402-25410
Author(s):  
Dabin Lin ◽  
Lin Ma ◽  
Wenjun Ni ◽  
Cheng Wang ◽  
Fangteng Zhang ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Two Dimensional ◽  
Transport Mechanisms ◽  
Carrier Relaxation ◽  
Hot Carrier ◽  
Layered Perovskites ◽  
2D To 3D

Ultrafast sub-ps hot carrier relaxation followed by subsequent ps carrier transport from layered 2D to 3D-like perovskite phases is demonstrated.

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