2007 International Semiconductor Device Research Symposium
Latest Publications

TOTAL DOCUMENTS

336

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781424418916, 9781424418923

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Solution process ZnO and pentacene bilayer transistor: ambipolar, p-channel and n-channel operation

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422330 ◽

2007 ◽

Author(s):

Bhola Nath Pal ◽

Howard E. Katz

Keyword(s):

Solution Process

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Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422553 ◽

2007 ◽

Author(s):

Meng-Fu Shih ◽

Yung-Hsiang Lin ◽

Chun-Wei Liao ◽

Chang-Ying Yen ◽

Yi-Lun Chou ◽

...

Keyword(s):

Optical Properties ◽

Electrical And Optical Properties ◽

Magnesium Doping ◽

Type Layer ◽

P Type

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Room-temperature bias acceleration test for data retention screening on SONOS nonvolatile memory devices

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422539 ◽

2007 ◽

Author(s):

Jeong-Mo Hwang ◽

Todd Wallinger ◽

Holden Hackbarth

Keyword(s):

Nonvolatile Memory ◽

Room Temperature ◽

Memory Devices ◽

Data Retention ◽

Temperature Bias ◽

Nonvolatile Memory Devices ◽

Acceleration Test

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Re-configurable all-optical devices based on electrically controlled cross-polarized wave conversion

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422273 ◽

2007 ◽

Author(s):

Montasir Qasymeh ◽

Michael Cada

Keyword(s):

Optical Devices ◽

All Optical ◽

Wave Conversion

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Two-dimensional analytical sub-threshold modeling and simulation of Gate Material Engineered HEMT for enhanced carrier transport Efficiency

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422374 ◽

2007 ◽

Author(s):

Sona P. Kumar ◽

Anju Agrawal ◽

Rishu Chaujar ◽

Mridula Gupta ◽

R.S. Gupta

Keyword(s):

Modeling And Simulation ◽

Carrier Transport ◽

Two Dimensional ◽

Transport Efficiency ◽

Threshold Modeling

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Bulk GaN-Based Schottky rectifier and UV photodetector

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422435 ◽

2007 ◽

Author(s):

M. Park ◽

Y. Zhou ◽

C. Ahyi ◽

D. Wang ◽

C. C. Tin ◽

...

Keyword(s):

Uv Photodetector ◽

Bulk Gan ◽

Schottky Rectifier

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The semiconductor-dielectric interface from PN junction edge and the voltage dependence of leakage reverse current

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422555 ◽

2007 ◽

Cited By ~ 4

Author(s):

Vasile V. N. Obreja

Keyword(s):

Voltage Dependence ◽

Reverse Current ◽

Dielectric Interface ◽

Pn Junction

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Relative intensity noise study in the injection-locked integrated electroabsorption modulator-lasers

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422352 ◽

2007 ◽

Author(s):

Xiaomin Jin ◽

Bennet Yun Tarng ◽

Shun Lien Chuang

Keyword(s):

Relative Intensity ◽

Relative Intensity Noise ◽

Intensity Noise ◽

Electroabsorption Modulator

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Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422229 ◽

2007 ◽

Author(s):

Grace Huiqi Wang ◽

Eng-Huat Toh ◽

Doran Weeks ◽

Trevan Landin ◽

Jennifer Spear ◽

...

Keyword(s):

Performance Enhancement ◽

Stress Transfer ◽

Transfer Layer ◽

Strained Si

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Enhancement of critical dimension of wet-etched thick insulator holes in triode CNT-FED devices

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422367 ◽

2007 ◽

Author(s):

Hsiao-Fen Wei ◽

Ging-Ho Hsiue ◽

Chin-Yh Liu ◽

Kuo-Feng Chen ◽

Kuang-Chung Chen

Keyword(s):

Critical Dimension

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2007 International Semiconductor Device Research SymposiumLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Solution process ZnO and pentacene bilayer transistor: ambipolar, p-channel and n-channel operation

Minor magnesium doping in P-type layer of InGaN/GaN MQW LED to enhance electrical and optical properties

Room-temperature bias acceleration test for data retention screening on SONOS nonvolatile memory devices

Re-configurable all-optical devices based on electrically controlled cross-polarized wave conversion

Two-dimensional analytical sub-threshold modeling and simulation of Gate Material Engineered HEMT for enhanced carrier transport Efficiency

Bulk GaN-Based Schottky rectifier and UV photodetector

The semiconductor-dielectric interface from PN junction edge and the voltage dependence of leakage reverse current

Relative intensity noise study in the injection-locked integrated electroabsorption modulator-lasers

Strained Si n-FET featuring compliant SiGe Stress Transfer Layer (STL) and Si0.98C0.02 source/drain stressors for performance enhancement

Enhancement of critical dimension of wet-etched thick insulator holes in triode CNT-FED devices

2007 International Semiconductor Device Research Symposium
Latest Publications