Ultra-thin strained Si on insulator substrate using laser annealing

2006 ◽  
Author(s):  
Y. Mishima ◽  
A. Mimura ◽  
M. Fukuda ◽  
H. Ochimizu ◽  
M. Fukuda ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Strained Si ◽  
Insulator Substrate

Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology

2001 ◽  
Vol 48 (8) ◽  
pp. 1612-1618 ◽  
Author(s):  
T. Mizuno ◽  
N. Sugiyama ◽  
A. Kurobe ◽  
S.-i. Takagi
Keyword(s):  
Strained Si ◽  
Insulator Substrate

Strain Relaxation in Strained-Si Layer on SiGe-on-Insulator Substrate

2006 ◽  
Author(s):  
N. Hirashita ◽  
Y. Moriyama ◽  
E. Toyoda ◽  
N. Sugiyama ◽  
S. Takagi
Keyword(s):  
Strain Relaxation ◽  
Strained Si ◽  
Insulator Substrate

Strain Relaxation in Strained-Si Layer on SiGe-on-Insulator Substrate

2006 ◽  
Author(s):  
N. Hirashita ◽  
Y. Moriyama ◽  
E. Toyoda ◽  
N. Sugiyama ◽  
S. Takagi
Keyword(s):  
Strain Relaxation ◽  
Strained Si ◽  
Insulator Substrate

Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate

2009 ◽  
Vol 26 (11) ◽  
pp. 116802 ◽  
Author(s):  
Liu Xu-Yan ◽  
Liu Wei-Li ◽  
Ma Xiao-Bo ◽  
Chen Chao ◽  
Song Zhi-Tang ◽  
...  
Keyword(s):  
High Quality ◽  
Strained Si ◽  
Insulator Substrate

Strain Relaxation in Strained-Si Layer on SiGe-on-Insulator Substrate

2006 ◽  
Author(s):  
N. Hirashita ◽  
Y. Moriyama ◽  
E. Toyoda ◽  
N. Sugiyama ◽  
S. Takagi
Keyword(s):  
Strain Relaxation ◽  
Strained Si ◽  
Insulator Substrate

Direct formation of strained Si on insulator by laser annealing

2006 ◽  
Vol 508 (1-2) ◽  
pp. 96-98 ◽  
Author(s):  
Isao Tsunoda ◽  
Ryo Matsuura ◽  
Masanori Tanaka ◽  
Hajime Watakabe ◽  
Toshiyuki Sameshima ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Strained Si ◽  
Direct Formation

Enhanced Boron Activation in Strained-Si/Si1-xGex Substrate Using Laser Annealing

2019 ◽  
Vol 1 (30) ◽  
pp. 1-6
Author(s):  
Kin-Leong Pey ◽  
Kuang-Kian Ong ◽  
Pooi-See Lee ◽  
Andrew Wee ◽  
Xincai Wang ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Strained Si

Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-57-Pr3-60
Author(s):  
J. B. Roldán ◽  
F. Gámiz ◽  
J. A. López-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Low Temperature ◽  
High Mobility ◽  
Strained Si
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