2006 International SiGe Technology and Device Meeting
Latest Publications

TOTAL DOCUMENTS

371

(FIVE YEARS 0)

H-INDEX

4

(FIVE YEARS 0)

Published By IEEE

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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Lateral Quantum Dot in Si/SiGe Realized by a Schottky Split-Gate Technique

2006 International SiGe Technology and Device Meeting ◽

10.1109/istdm.2006.1716032 ◽

2006 ◽

Author(s):

T. Berer ◽

D. Pachinger ◽

G. Pillwein ◽

M. Muhlberger ◽

H. Lichtenberger ◽

...

Keyword(s):

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Improved Carbon Incorporation in Selective Epitaxial Growth of SiGe:C for HBT Applications

2006 International SiGe Technology and Device Meeting ◽

10.1109/istdm.2006.1716041 ◽

2006 ◽

Author(s):

F. Brossard ◽

B. Vandelle ◽

P. Chevalier ◽

D. Dutartre

Keyword(s):

Epitaxial Growth ◽

Carbon Incorporation ◽

Selective Epitaxial Growth

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Theory of X-ray Diffraction from Partially Relaxed SiGe/Si Layers

2006 International SiGe Technology and Device Meeting ◽

10.1109/istdm.2006.1715988 ◽

2006 ◽

Author(s):

H. Trinkaus ◽

D. Buca ◽

B. Hollander ◽

S. Mantl ◽

A.R. Khan ◽

...

Keyword(s):

X Ray Diffraction ◽

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Growth of Strain-Relaxed Si>inf/infinf/inf

2006 International SiGe Technology and Device Meeting ◽

10.1109/istdm.2006.1715970 ◽

2006 ◽

Author(s):

H. Ishihara ◽

M. Murano ◽

A. Yamada ◽

M. Konagai

Keyword(s):

Gas Source Mbe ◽

Carbon Composition

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The Influence of the Collector Design on the f>inf/infinf/inf

2006 International SiGe Technology and Device Meeting ◽

10.1109/istdm.2006.1715979 ◽

2006 ◽

Author(s):

C. Schippel ◽

F. Schwierz ◽

Jun Fu

Keyword(s):

Bipolar Transistors ◽

Different Types

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Thermoelectric Temperature Sensors Based on Si-Ge Whiskers

2006 International SiGe Technology and Device Meeting ◽

10.1109/istdm.2006.1715967 ◽

2006 ◽

Author(s):

A.A. Druzhinin ◽

I.P. Ostrovskii ◽

I.R. Kogut

Keyword(s):

Temperature Sensors ◽

Thermoelectric Temperature

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Simulations of Non-Uniform, Non-Linear Collector Doping Profiles for SiGe HBTs

2006 International SiGe Technology and Device Meeting ◽

10.1109/istdm.2006.1716006 ◽

2006 ◽

Author(s):

E. Preisler ◽

W. Cai ◽

Jie Zheng ◽

M. Racanelli

Keyword(s):

Doping Profiles

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Surface Segregation and Electrical Studies of Heavily Arsenic and Phosphorus in situ Doped Epi and Poly Silicon

2006 International SiGe Technology and Device Meeting ◽

10.1109/istdm.2006.1716057 ◽

2006 ◽

Author(s):

G. Borot ◽

L. Rubaldo ◽

N. Breil ◽

J. Boussey ◽

X. Mescot ◽

...

Keyword(s):

Surface Segregation ◽

Electrical Studies ◽

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Negative Differential Resistance in Ultra-Thin Ge-On-Insulator FETs

2006 International SiGe Technology and Device Meeting ◽

10.1109/istdm.2006.1715947 ◽

2006 ◽

Author(s):

D. Kazazis ◽

A. Zaslavsky ◽

E. Tutuc ◽

N.A. Bojarczuk ◽

S. Guha

Keyword(s):

Negative Differential Resistance ◽

Differential Resistance

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Hole Tunneling Properties in Resonant Tunneling Diodes with Si/Strained Si>inf/infinf/inf

2006 International SiGe Technology and Device Meeting ◽

10.1109/istdm.2006.1715981 ◽

2006 ◽

Author(s):

R. Ito ◽

M. Sakuraba ◽

J. Murota

Keyword(s):

Resonant Tunneling ◽

Resonant Tunneling Diodes ◽

Strained Si ◽

Tunneling Diodes

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