Bidirectional switchable beam splitter/filter based graphene loaded Si ring ‎resonators

Using bus waveguides coupled to the graphene-loaded Si-ring resonators (GSRRs) all on a Si-‎on-insulator substrate, we propose a compact bidirectional switchable beam splitter/filter ‎controlled by graphene-based electro-absorptive (refractive) mode modulation. The proposed ‎device consists of a through waveguide coupled to two drop waveguides via two GSRRs. ‎Each GSRR consists of a stack of hBN/graphene/hBN nanolayers sandwiched between two ‎Si-ring resonators. Using a finite difference time domain method, we show that the resonant ‎wavelength of GSRRs can be tuned in the range of 1551.5 < λ <1552.1 nm, linearly with the ‎slope of ~2.46 nm/eV via appropriately changing the graphene chemical potential, ‎electrostatically. The numerical results show that when both GSRRs are in an electro-refractive ‎state and a transverse electric (TE) polarized light beam of an appropriate wavelength is ‎launched into one of the though-ports, ~ 84.5% of the input intensity equally splits between ‎the adjacent drop-ports. The transmission out of the second through-port is less than 0.8%. ‎The numerical results further show that when one GSRR is in an electro-refractive mode, and ‎the other one is in an electro-absorptive state, ~68.4% of the input intensity transmits out of ‎the drop-port adjacent to the former GSRR, and the other ports experience insignificant ‎outputs (<0.7%). The device's structural symmetry makes it a bidirectional tunable, suitable for ‎long-haul optical telecommunication applications.‎

Electrically Tunable Perfect Terahertz Absorber Using Embedded Combline Graphene Layer

Graphene is a powerful 2-D matter with the capability of extraordinary transparency, and tunable conductivity is employed in emerging optoelectronics devices. In this article, the design of an electrically tunable graphene-based perfect terahertz absorber is proposed and evaluated numerically. The introduced structure is composed of two graphene layers with a sharp absorption peak in the terahertz band. These graphene layers are combline and stripline separated by the insulator substrate. The position of the absorption peak is tunable on the absorption band by means of manipulation in geometric parameters of the combline graphene layer. Furthermore, the intensity and frequency of the absorption peak can be flexibly modulated by varying Fermi potential of the combline graphene layer, which can be controlled through external DC voltages without the need of changing the geometry of the structure. It is shown that the absorption band can be tuned in the bandwidth from 5 to 15 in terahertz. The findings of this paper can promote a new perspective in designing perfect ribbon absorbers based on graphene properties that can be utilized for future photodetectors, solar cells, and thermal sensors with an absorption intensity above 2 × 105(nm2) with narrow absorption bandwidth of 0.112 THz.

Зависимость люминесцентных свойств упорядоченных групп Ge(Si) наноостровков от параметров ямок на структурированной поверхности подложки "кремний на изоляторе"

This paper presents the results of studies of the luminescence properties of structures with Ge(Si) quantum dots (QDs), in which a pit-patterned surface of silicon on insulator substrate served both for the spatial ordering of QDs and for the formation of a two-dimensional photonic crystal. It is shown that by choosing the parameters of pit-patterned substrate (the diameter of the pits and the period of their location), it is possible to provide a significant increase of intensity of the QD luminescence signal in the near-IR range. This enhancement is associated with interaction of spatially ordered QD emission with the modes of a photonic crystal formed by the pattern of pits. The effect of amplification of the luminescence signal persists up to room temperature.