A Monte Carlo sampling method for drawing representative samples from large databases

Author(s):  
Hong Guo ◽  
Wen-Chi Hou ◽  
Feng Yan ◽  
Qiang Zhu
2018 ◽  
Vol 98 ◽  
pp. 11-26 ◽  
Author(s):  
Alejandro Peña ◽  
Isis Bonet ◽  
Christian Lochmuller ◽  
Francisco Chiclana ◽  
Mario Góngora

2020 ◽  
Vol 16 (10) ◽  
pp. 6645-6655
Author(s):  
Hao Liu ◽  
Jianpeng Deng ◽  
Zhou Luo ◽  
Yawei Lin ◽  
Kenneth M. Merz ◽  
...  

Circuit World ◽  
2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Swapnali Makdey ◽  
Rajendra Patrikar ◽  
Mohammad Farukh Hashmi

Purpose A “spin-diode” is the spintronics equivalent of an electrical diode: applying an external magnetic field greater than the limit of spin-diode BT flips the spin-diode between an isolating state and a conducting state [1]. While conventional electrical diodes are two-terminal devices with electrical current between the two terminals modulated by an electrical field, these two-terminal magneto resistive devices can generally be referred to as “spin-diodes” in which a magnetic field modulates the electrical current between the two terminals. Design/methodology/approach Current modulation and rectification are an important subject of electronics as well as spintronics spin diode is two-terminal magnetoresistive devices in which change in resistance in response to an applied magnetic field; this magnetoresistance occurs due to a variety of phenomena and with varying magnitudes and directions. Findings In this paper, an efficient rectifying spin diode is introduced. The resulting spin diode is formed from graphene gallium and indium quantum dots and antimony-doped molybdenum disulfide. Converting an alternating bias voltage to direct current is the main achievement of this model device with an additional profit of rectified spin-current. The non-equilibrium density functional theory with a Monte Carlo sampling method is used to evaluate the flow of electrons and rectification ratio of the system. Originality/value The results indicate that spin diode displaying both spin-current and charge-current rectification should be possible and may find practical application in nanoscale devices that combine logic and memory functions.


Author(s):  
Takayuki Shiina ◽  

We consider the stochastic programming problem with recourse in which the expectation of the recourse function requires a large number of function evaluations, and its application to the capacity expansion problem. We propose an algorithm which combines an L-shaped method and a Monte Carlo method. The importance sampling technique is applied to obtain variance reduction. In the previous approach, the recourse function is approximated as an additive form in which the function is separable in the components of the stochastic vector. In our approach, the approximate additive form of the recourse function is perturbed to define the new density function. Numerical results for the capacity expansion problem are presented.


2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Pei-Yu Li

This paper uses a merit function derived from the Fishcher–Burmeister function and formulates box-constrained stochastic variational inequality problems as an optimization problem that minimizes this merit function. A sufficient condition for the existence of a solution to the optimization problem is suggested. Finally, this paper proposes a Monte Carlo sampling method for solving the problem. Under some moderate conditions, comprehensive convergence analysis is included as well.


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