Investigation on Annealing Procedure for Large Casting Steel for CYCIAE-100

2010 ◽  
Vol 20 (3) ◽  
pp. 1492-1495 ◽  
Author(s):  
Chuan Wang ◽  
Junqing Zhong ◽  
Tianjue Zhang ◽  
Jianzhong Wang ◽  
Yinlong Lv ◽  
...  
Keyword(s):  
Large Casting ◽  
Annealing Procedure ◽  
Casting Steel

TEM investigations of surface residual stress relaxation in A12O3 and Al2O3-SiC nanocomposite

1994 ◽  
Vol 52 ◽  
pp. 628-629
Author(s):  
J. Fang ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Residual Stress ◽  
Single Phase ◽  
Stress Relief ◽  
Stress Recovery ◽  
Surface Residual Stress ◽  
Microscopic Mechanism ◽  
Sic Particles ◽  
Annealing Procedure ◽  
The Difference ◽  
Nano Size

It was Niihara et al. who first discovered that the fracture strength of Al2O3 can be increased by incorporating as little as 5 vol.% of nano-size SiC particles (>1000 MPa), and that the strength would be improved further by a simple annealing procedure (>1500 MPa). This discovery has stimulated intense interest on Al2O3/SiC nanocomposites. Recent indentation studies by Fang et al. have shown that residual stress relief was more difficult in the nanocomposite than in pure Al2O3. In the present work, TEM was employed to investigate the microscopic mechanism(s) for the difference in the residual stress recovery in these two materials.Bulk samples of hot-pressed single phase Al2O3, and Al2O3 containing 5 vol.% 0.15 μm SiC particles were simultaneously polished with 15 μm diamond compound. Each sample was cut into two pieces, one of which was subsequently annealed at 1300° for 2 hours in flowing argon. Disks of 3 mm in diameter were cut from bulk samples.

Laser Annealing of Te-Implanted III-V Semiconductors Studied by Mossbauer Spectroscopy

1980 ◽  
Vol 3 ◽  
Author(s):  
M. Van Rossum ◽  
I. Dezsi ◽  
G. Langouche ◽  
J. De Bruyn ◽  
R. Coussement
Keyword(s):  
Mössbauer Spectroscopy ◽  
Laser Annealing ◽  
Mossbauer Spectroscopy ◽  
Quadrupole Split ◽  
Annealing Behaviour ◽  
Mößbauer Spectroscopy ◽  
Annealing Procedure

ABSTRACTThe laser annealing behaviour of Te-implanted GaAs, GaSb, GaP and InP has been studied by Mössbauer Spectroscopy. The spectra of the as-implanted samples are characterized by a quadrupole split multiplet, showing that the Te ions come to rest at non-substitutional lattice sites. The laser annealing is shown to shift the implanted impurities towards substitutional positions. The efficiency of the laser annealing procedure is very similar for all lattices under study.

Facile synthesis of CuO micro-sheets over Cu foil in oxalic acid solution and their sensing properties towards n-butanol

2016 ◽  
Vol 4 (5) ◽  
pp. 985-990 ◽  
Author(s):  
Chengjun Dong ◽  
Lihong Wang ◽  
Gang Chen ◽  
Xuechun Xiao ◽  
Igor Djerdj ◽  
...  
Keyword(s):  
Oxalic Acid ◽  
Acid Solution ◽  
Oxalic Acid Solution ◽  
Facile Synthesis ◽  
Sensing Properties ◽  
Annealing Procedure ◽  
Cu Foil

Here, CuO micro-sheets were successfully synthesized from Cu foil using the annealing procedure.

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