Total dose and displacement damage effects in a radiation-hardened CMOS APS

2003 ◽  
Vol 50 (1) ◽  
pp. 84-90 ◽  
Author(s):  
J. Bogaerts ◽  
B. Dierickx ◽  
G. Meynants ◽  
D. Uwaerts
Keyword(s):  
Total Dose ◽  
Displacement Damage ◽  
Radiation Hardened

РАДИАЦИОННО СТОЙКОЕ КМОП СТАТИЧЕСКОЕ ОЗУ 16 МБИТ 1657РУ2У

2020 ◽  
Vol 96 (3s) ◽  
pp. 169-174
Author(s):  
Ю.М. Герасимов ◽  
Н.Г. Григорьев ◽  
А.В. Кобыляцкий ◽  
Я.Я. Петричкович
Keyword(s):  
Total Dose ◽  
Heavy Particles ◽  
Topological Features ◽  
Radiation Hardened ◽  
Latch Up

Рассматриваются архитектурные, схемотехнические и конструктивно-топологические особенности асинхронного радиационно стойкого ОЗУ 1657РУ2У емкостью 16 Мбит с организацией (1Мx16)/(2Mx8), изготавливаемого по коммерческой КМОП-технологии объемного кремния уровня 130 нм. СБИС ОЗУ нечувствительна к эффекту «защелкивания», имеет повышенные дозовую стойкость и сбоеустойчивость при воздействии отдельных ядерных частиц (ОЯЧ), протонов и нейтронов (ТЧ). The paper highlights architectural, schematic and topological features of the radiation hardened 16 Mbit CMOS SRAM with configurable organization 1Mx16/2Mx8, which is immune to latch-up and with improved total dose and heavy particles tolerance.

scholarly journals Total Dose Effects on 4H-SiC Bipolar Junction Transistors

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén
Keyword(s):  
Total Dose ◽  
Detailed Analysis ◽  
Surface Recombination ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Displacement Damage ◽  
Base Current ◽  
Dose Effects ◽  
Order Of Magnitude ◽  
Total Dose Effects

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.

Total-dose characterization of a high-performance radiation-hardened 1.0- mu m CMOS sea-of-gates technology

1990 ◽  
Vol 37 (6) ◽  
pp. 2089-2096 ◽  
Author(s):  
I. Yoshii ◽  
K. Hama ◽  
K. Maeguchi ◽  
S. Takatsuka ◽  
H. Hatano
Keyword(s):  
Total Dose ◽  
High Performance ◽  
Radiation Hardened

scholarly journals High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors

2020 ◽  
Vol 67 (7) ◽  
pp. 1256-1262
Author(s):  
Serena Rizzolo ◽  
Alexandre Le Roch ◽  
Olivier Marcelot ◽  
Franck Corbiere ◽  
Philippe Paillet ◽  
...  
Keyword(s):  
Image Sensors ◽  
Displacement Damage ◽  
Damage Dose ◽  
Cmos Image Sensors ◽  
Dose Effects ◽  
Radiation Hardened
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