Analytical solutions to the one-dimensional oxide-silicon-oxide system

2003 ◽  
Vol 50 (8) ◽  
pp. 1793-1800 ◽  
Author(s):  
Xuejie Shi ◽  
Man Wong
Keyword(s):  
Analytical Solutions ◽  
Silicon Oxide ◽  
Oxide System ◽  
One Dimensional ◽  
The One

A Simulation System for Diffusive Oxidation of Silicon:One-Dimensional Analysis

1991 ◽  
Vol 46 (11) ◽  
pp. 955-966 ◽  
Author(s):  
Ulrich Weinert ◽  
Ernst Rank
Keyword(s):  
Thermal Oxidation ◽  
Silicon Oxide ◽  
Simulation System ◽  
One Dimensional ◽  
Pure Silicon ◽  
Diffusive Interface ◽  
Model Equations ◽  
The One ◽  
Sharp Interfaces ◽  
Silicon Silicon

AbstractThermal oxidation of silicon is described as a three-component thermodynamic local process involving silicon, silicon oxide, and oxygen molecules. A simplified system of model equations is used to demonstrate the evoluton of the Si-SiO2 interface. For the one-dimensional case the equivalence with the model of Deal and Grove could be shown analytically. For that purpose effective interface coordinates have been introduced which establish the connection between the conventional concept of sharp interfaces and our "diffusive" interface, i.e., a transition region between pure silicon and pure silicon oxide.

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