scholarly journals Enhancing Programming Variability in Multi-Bit Phase Change Memory Cells for Security

2020 ◽  
Vol 19 ◽  
pp. 820-828
Author(s):  
Nafisa Noor ◽  
Sadid Muneer ◽  
Raihan Sayeed Khan ◽  
Anna Gorbenko ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Modeling of Set and Reset Operations of Phase-Change Memory Cells

2011 ◽  
Vol 32 (12) ◽  
pp. 1737-1739 ◽  
Author(s):  
Azer Faraclas ◽  
Nicholas Williams ◽  
Ali Gokirmak ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Surface-Tensile-Stress Induced Polishing-Voids Suppression via H2O2 Oxidizer Effect in Cross-Point Phase-Change-Memory-Cells

2019 ◽  
Vol 8 (11) ◽  
pp. P667-P672
Author(s):  
Soo-Bum Kim ◽  
Hao Cui ◽  
Jong-Young Cho ◽  
Eun-Bin Seo ◽  
Sang-Su Yun ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Cross Point ◽  
Change Memory

Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse

2011 ◽  
Vol 98 (24) ◽  
pp. 242106 ◽  
Author(s):  
D. Q. Huang ◽  
X. S. Miao ◽  
Z. Li ◽  
J. J. Sheng ◽  
J. J. Sun ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Change ◽  
Electric Pulse ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Temperature dependence of SET switching characteristics in phase-change memory cells

2016 ◽  
Vol 49 (38) ◽  
pp. 385101
Author(s):  
Qiang He ◽  
Zhen Li ◽  
Chang Liu ◽  
Xiang-ru Meng ◽  
Ju-hong Peng ◽  
...  
Keyword(s):  
Phase Change ◽  
Temperature Dependence ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Set Switching ◽  
Switching Characteristics ◽  
Change Memory

Stopping Resistance Drift in Phase Change Memory Cells

2020 ◽  
Author(s):  
Raihan S. Khan ◽  
ABM Hasan Talukder ◽  
Faruk Dirisaglik ◽  
Ali Gokirmak ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Carbon-Based Liner for RESET Current Reduction in Self-Heating Phase- Change Memory Cells

2020 ◽  
Vol 67 (10) ◽  
pp. 4228-4233
Author(s):  
Anabel De Proft ◽  
Daniele Garbin ◽  
Gabriele Luca Donadio ◽  
Hubert Hody ◽  
Thomas Witters ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Self Heating ◽  
Heating Phase ◽  
Current Reduction ◽  
Change Memory ◽  
Carbon Based

scholarly journals Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells

2019 ◽  
Vol 114 (16) ◽  
pp. 163507 ◽  
Author(s):  
Phoebe Yeoh ◽  
Yuanzhi Ma ◽  
David A. Cullen ◽  
James A. Bain ◽  
Marek Skowronski
Keyword(s):  
Phase Change ◽  
Thermal Gradient ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Elemental Segregation ◽  
Change Memory

Design of an Initialization Circuit Used in Phase Change Memory Chip

2014 ◽  
Vol 543-547 ◽  
pp. 471-474
Author(s):  
Qian Wang ◽  
Hou Peng Chen ◽  
Yi Yun Zhang ◽  
Xi Fan ◽  
Xi Li ◽  
...  
Keyword(s):  
Phase Change ◽  
High Resistance ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Memory Chip ◽  
Grain Sizes ◽  
Reset Operation ◽  
Materials Used ◽  
Change Memory

Design of a novel initialization circuit is presented in this paper. The initialization circuit is used to supply initialization current to the first test of phase change memory chip after delivery. Inhomogeneous crystalline grain sizes appear in phase change materials used in memory cells during manufacturing process. The crystalline phase with low resistance will convert to amorphous phase with high resistance after initialization, which is called RESET the memory cells to 0. Normal RESET operation current is not high enough to RESET great grain, which deteriorates bit yield of phase change memory chip. In comparison, the higher initialization current will increase bit yield observably.

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