Design of an Initialization Circuit Used in Phase Change Memory Chip

2014 ◽  
Vol 543-547 ◽  
pp. 471-474
Author(s):  
Qian Wang ◽  
Hou Peng Chen ◽  
Yi Yun Zhang ◽  
Xi Fan ◽  
Xi Li ◽  
...  

Design of a novel initialization circuit is presented in this paper. The initialization circuit is used to supply initialization current to the first test of phase change memory chip after delivery. Inhomogeneous crystalline grain sizes appear in phase change materials used in memory cells during manufacturing process. The crystalline phase with low resistance will convert to amorphous phase with high resistance after initialization, which is called RESET the memory cells to 0. Normal RESET operation current is not high enough to RESET great grain, which deteriorates bit yield of phase change memory chip. In comparison, the higher initialization current will increase bit yield observably.

2012 ◽  
Vol 33 (4) ◽  
pp. 594-596 ◽  
Author(s):  
Mattia Boniardi ◽  
Andrea Redaelli ◽  
Innocenzo Tortorelli ◽  
Fabio Pellizzer ◽  
Agostino Pirovano

2019 ◽  
Vol 58 (10) ◽  
pp. 105003
Author(s):  
Changcheng Ma ◽  
Jing He ◽  
Jingjing Lu ◽  
Jie Zhu ◽  
Zuoqi Hu

2013 ◽  
Vol 28 (3) ◽  
pp. 299-307
Author(s):  
Nevena Zdjelarevic ◽  
Ivan Knezevic ◽  
Milos Vujisic ◽  
Ljubinko Timotijevic

Monte Carlo simulations of proton irradiation on phase change memory cells were conducted and the proton dose, in both the whole memory cell and in its active layer, calculated. The memory cell was modeled by a multi-layer stack consisting of two TiW electrodes and ZnS-SiO2 films as insulators surrounding the active region. Materials considered for the active region were Ge2Sb2Te5, AgSbSe2, and Si2Sb2Te5. The effects of exposing phase change memory cells to proton beams were investigated for various thicknesses of phase change materials and different proton energies. Radiation-induced changes in the investigated memory cells are presented, including the accumulation of atomic displacements and the thermal heating of the active region. Possible effects of these changes on cell operation are discussed.


2020 ◽  
Vol 19 ◽  
pp. 820-828
Author(s):  
Nafisa Noor ◽  
Sadid Muneer ◽  
Raihan Sayeed Khan ◽  
Anna Gorbenko ◽  
Helena Silva

2011 ◽  
Vol 32 (12) ◽  
pp. 1737-1739 ◽  
Author(s):  
Azer Faraclas ◽  
Nicholas Williams ◽  
Ali Gokirmak ◽  
Helena Silva

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Wei Zhang ◽  
Biyun L. Jackson ◽  
Ke Sun ◽  
Jae Young Lee ◽  
Shyh-Jer Huang ◽  
...  

The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling limit of its use as a phase change memory element. In2Se3of progressively smaller volume is heated inside a transmission electron microscope operating in diffraction mode. The volume at which the amorphous-crystalline transition can no longer be observed is taken as the ultimate scaling limit, which is approximately 5 nm3for In2Se3. The physics for the existence of scaling limit is discussed. Using phase change memory elements in memory hierarchy is believed to reduce its energy consumption because they consume zero leakage power in memory cells. Therefore, the phase change memory applications are of great importance in terms of energy saving.


2019 ◽  
Vol 8 (11) ◽  
pp. P667-P672
Author(s):  
Soo-Bum Kim ◽  
Hao Cui ◽  
Jong-Young Cho ◽  
Eun-Bin Seo ◽  
Sang-Su Yun ◽  
...  

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