2020 Device Research Conference (DRC)
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46
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Published By IEEE

9781728170473
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts

2020 ◽  
Author(s):  
Devansh Saraswat ◽  
Wenshen Li ◽  
Kazuki Nomoto ◽  
Debdeep Jena ◽  
Huili Grace Xing
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Plane Surface ◽  
Parallel Plane ◽  
Schottky Barrier Diodes ◽  
Surface Electric Field ◽  
Very High

Utilizing Valley-Spin Hall Effect in WSe2 for Low Power Non-Volatile Flip-Flop Design

2020 ◽  
Author(s):  
K. Cho ◽  
S. K. Thirumala ◽  
X. Liu ◽  
N. Thakuria ◽  
Z. Chen ◽  
...  
Keyword(s):  
Low Power ◽  
Hall Effect ◽  
Spin Hall Effect ◽  
Flip Flop

Stopping Resistance Drift in Phase Change Memory Cells

2020 ◽  
Author(s):  
Raihan S. Khan ◽  
ABM Hasan Talukder ◽  
Faruk Dirisaglik ◽  
Ali Gokirmak ◽  
Helena Silva
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Change Memory

Multiplication characteristics of Al0.4Ga0.07In0.53As avalanche photodiodes grown as digital alloys on InP substrates

2020 ◽  
Author(s):  
S. Lee ◽  
S. H. Kodati ◽  
D. R. Fink ◽  
T. J. Ronningen ◽  
A. H. Jones ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Digital Alloys ◽  
Inp Substrates

Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double Layers

2020 ◽  
Author(s):  
Chia-Chun Yen ◽  
An-Hung Tai ◽  
Yu-Chieh Liu ◽  
Chun-Hung Yeh ◽  
C. W. Liu
Keyword(s):  
Double Layers ◽  
Amorphous Ingazno

Flexible Low-Power Superlattice-Like Phase Change Memory

2020 ◽  
Author(s):  
Asir Intisar Khan ◽  
Alwin Daus ◽  
Eric Pop
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

GaN Nanowire Field Emitters with a Self-Aligned Gate Process

2020 ◽  
Author(s):  
Pao-Chuan Shih ◽  
Girish Rughoobur ◽  
Peng Xiang ◽  
Kai Liu ◽  
Kai Cheng ◽  
...  
Keyword(s):  
Field Emitters ◽  
Gan Nanowire

Reliability improvement of ferroelectric Hf0.5Zr0.5O2 thin films by Lanthanum doping for FeRAM applications

2020 ◽  
Author(s):  
Furqan Mehmood ◽  
Thomas Mikolajick ◽  
Uwe Schroeder
Keyword(s):  
Thin Films ◽  
Lanthanum Doping ◽  
Reliability Improvement
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