scholarly journals Recent Advances in High Voltage Electron Beam Injectors

1975 ◽  
Vol 22 (3) ◽  
pp. 1354-1357 ◽  
Author(s):  
J. Haimson
Keyword(s):  
Electron Beam ◽  
High Voltage ◽  
Voltage Electron ◽  
Recent Advances ◽  
High Voltage Electron

Superhigh dust charging by high-voltage electron beam

2011 ◽  
Vol 94 (5) ◽  
pp. 55001 ◽  
Author(s):  
V. E. Fortov ◽  
A. V. Gavrikov ◽  
O. F. Petrov ◽  
V. S. Sidorov ◽  
M. N. Vasiliev ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Voltage ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
Dust Charging

Lower submicron pattern definition by high-voltage electron-beam lithography

1982 ◽  
Vol 18 (20) ◽  
pp. 880 ◽  
Author(s):  
M. Yoshimi ◽  
K. Kawabuchi ◽  
T. Takigawa ◽  
M. Takahashi ◽  
Y. Kato
Keyword(s):  
Electron Beam ◽  
High Voltage ◽  
Electron Beam Lithography ◽  
Voltage Electron ◽  
High Voltage Electron

High-resolution charge collection microscopy with high-voltage electron beams

1994 ◽  
Vol 52 ◽  
pp. 954-955
Author(s):  
D. M. Hwang ◽  
Y. A. Tkachenko ◽  
J. C. M. Hwang
Keyword(s):  
Electron Beam ◽  
Spatial Resolution ◽  
High Voltage ◽  
Semiconductor Device ◽  
Field Effect Transistors ◽  
Electron Beams ◽  
Degradation Mechanism ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
Probing Depth

Electron-beam-induced-current (EBIC) microscopy has the unique capability of simultaneously providing structural and transport characteristics of semiconductors. However, EBIC is traditionally performed inside an SEM with less than 40 keV electron beam energy. As the result, the applications of traditional EBIC for semiconductor device characterization are limited by either probing depth (0.02 ~0.05 μm with 2 ~5 keV electron beams) or spatial resolution (1-2 um with 20 ~40 keV electron beams). To achieve useful resolution for studying the interface effects critical to today's submicron devices, one would have to prepare the samples by either removing the passivation/metallization layers or making cross sections. In this paper, we report a breakthrough in the art of EBIC using high-voltage electron beams (200 keV and higher) to improve the spatial resolution and probing depth simultaneously. Adopting a JEOL 4000FX AEM for EBIC imaging, a spatial resolution of 0.05 um was demonstrated from structures 0.5 um beneath the surface. Using this technique, we have identified a facet degradation mechanism in strained quantum well laser diodes and hot-electroninduced defects in GaAs metal-semiconductor field-effect transistors (MESFETs).

The Performance Optimization Design of High Frequency and High Voltage Transformer of Electronic Beam Welder

2011 ◽  
Vol 383-390 ◽  
pp. 7202-7207
Author(s):  
Sheng Wen Fan ◽  
Yun Zhao
Keyword(s):  
Electron Beam ◽  
High Voltage ◽  
Power Supply ◽  
Performance Optimization ◽  
High Frequency ◽  
Electron Beam Welding ◽  
Welding Process ◽  
Voltage Transformer ◽  
Voltage Electron ◽  
High Voltage Electron

High-frequency digital inverter power supply has the advantages of small, no noise, high efficiency, small ripp- le, and perfect protection, therefore, is gradually replacing the traditional electron beam welder which uses the 400Hz frequency generator. However, with more high frequency of the power supply, the design of the transformer used by the high-frequency high-voltage electron beam welding becomes difficult. Therefore, this paper put forward a diversified transformer mode and a voltage doubling rectifier circuit, which were used to reduce the transformer turns ratio, thus reducing the topology of the transformer distribution para- meters. Accordingly, a special high-frequency high-voltage electron beam welding tank is designed. Tests show that the set of performance indicators of the fuel tank meets the design goals to meet the actual needs of welding process.

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