Wavelet Analysis of RTS Noise in CMOS Image Sensors Irradiated With High-Energy Photons

2020 ◽  
Vol 67 (7) ◽  
pp. 1732-1737
Author(s):  
Ben Hendrickson ◽  
Ralf Widenhorn ◽  
Morley Blouke ◽  
Denis Heidtmann ◽  
Erik Bodegom
2013 ◽  
Vol 10 (15) ◽  
pp. 20130299-20130299 ◽  
Author(s):  
Mohd Amrallah Mustafa ◽  
Min-Woong Seo ◽  
Shoji Kawahito ◽  
Keita Yasutomi ◽  
Kiichiro Kagawa

2011 ◽  
Vol 32 (6) ◽  
pp. 776-778 ◽  
Author(s):  
Philippe Martin-Gonthier ◽  
Pierre Magnan

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5459
Author(s):  
Wei Deng ◽  
Eric R. Fossum

This work fits the measured in-pixel source-follower noise in a CMOS Quanta Image Sensor (QIS) prototype chip using physics-based 1/f noise models, rather than the widely-used fitting model for analog designers. This paper discusses the different origins of 1/f noise in QIS devices and includes correlated double sampling (CDS). The modelling results based on the Hooge mobility fluctuation, which uses one adjustable parameter, match the experimental measurements, including the variation in noise from room temperature to –70 °C. This work provides useful information for the implementation of QIS in scientific applications and suggests that even lower read noise is attainable by further cooling and may be applicable to other CMOS analog circuits and CMOS image sensors.


Author(s):  
Jing Fu ◽  
Jie Feng ◽  
Yu-Dong Li ◽  
Qi Guo ◽  
Ying Wei ◽  
...  

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 172467-172480
Author(s):  
Qihui Zhang ◽  
Ning Ning ◽  
Jing Li ◽  
Qi Yu ◽  
Kejun Wu ◽  
...  

2013 ◽  
Vol 60 (12) ◽  
pp. 4173-4179 ◽  
Author(s):  
Konstantin D. Stefanov ◽  
Zhige Zhang ◽  
Chris Damerell ◽  
David Burt ◽  
Arjun Kar-Roy

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