Effect of proton radiation on 8T CMOS image sensors for space applications

Author(s):  
Jing Fu ◽  
Jie Feng ◽  
Yu-Dong Li ◽  
Qi Guo ◽  
Ying Wei ◽  
...  
2007 ◽  
Author(s):  
P. Martin-Gonthier ◽  
P. Magnan ◽  
F. Corbiere ◽  
Magali Estribeau ◽  
Nicolas Huger ◽  
...  

Author(s):  
Robert Davancens ◽  
Franck Corbière ◽  
Olivier Saint-Pé ◽  
Michel Tulet ◽  
Franck Larnaudie ◽  
...  

Author(s):  
F. Mazzamuto ◽  
M. Brouwer ◽  
G. Preti ◽  
M. Rosmeulen ◽  
K. Minoglou ◽  
...  

2014 ◽  
Vol 29 (suppl.) ◽  
pp. 14-19 ◽  
Author(s):  
Salvatore Cappello ◽  
Calogero Pace ◽  
Aldo Parlato ◽  
Salvatore Rizzo ◽  
Elio Tomarchio

Technologically-enhanced electronic image sensors are used in various fields as diagnostic techniques in medicine or space applications. In the latter case the devices can be exposed to intense radiation fluxes over time which may impair the functioning of the same equipment. In this paper we report the results of gamma-ray irradiation tests on CMOS image sensors simulating the space radiation over a long time period. Gamma-ray irradiation tests were carried out by means of IGS-3 gamma irradiation facility of Palermo University, based on 60Co sources with different activities. To reduce the dose rate and realize a narrow gamma-ray beam, a lead-collimation system was purposely built. It permits to have dose rate values less than 10 mGy/s and to irradiate CMOS Image Sensors during operation. The total ionizing dose to CMOS image sensors was monitored in-situ, during irradiation, up to 1000 Gy and images were acquired every 25 Gy. At the end of the tests, the sensors continued to operate despite a background noise and some pixels were completely saturated. These effects, however, involve isolated pixels and therefore, should not affect the image quality.


Sensors ◽  
2017 ◽  
Vol 17 (12) ◽  
pp. 2781 ◽  
Author(s):  
Yuanyuan Xue ◽  
Zujun Wang ◽  
Wei Chen ◽  
Minbo Liu ◽  
Baoping He ◽  
...  

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5459
Author(s):  
Wei Deng ◽  
Eric R. Fossum

This work fits the measured in-pixel source-follower noise in a CMOS Quanta Image Sensor (QIS) prototype chip using physics-based 1/f noise models, rather than the widely-used fitting model for analog designers. This paper discusses the different origins of 1/f noise in QIS devices and includes correlated double sampling (CDS). The modelling results based on the Hooge mobility fluctuation, which uses one adjustable parameter, match the experimental measurements, including the variation in noise from room temperature to –70 °C. This work provides useful information for the implementation of QIS in scientific applications and suggests that even lower read noise is attainable by further cooling and may be applicable to other CMOS analog circuits and CMOS image sensors.


IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 172467-172480
Author(s):  
Qihui Zhang ◽  
Ning Ning ◽  
Jing Li ◽  
Qi Yu ◽  
Kejun Wu ◽  
...  

2013 ◽  
Vol 60 (12) ◽  
pp. 4173-4179 ◽  
Author(s):  
Konstantin D. Stefanov ◽  
Zhige Zhang ◽  
Chris Damerell ◽  
David Burt ◽  
Arjun Kar-Roy

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