A Computationally Efficient Two-Dimensional Model of the Beam–Wave Interaction in a Coupled-Cavity TWT

2012 ◽  
Vol 40 (6) ◽  
pp. 1575-1589 ◽  
Author(s):  
Alexander N. Vlasov ◽  
Thomas M. Antonsen ◽  
Igor A. Chernyavskiy ◽  
David P. Chernin ◽  
Baruch Levush
1991 ◽  
Vol 235 ◽  
Author(s):  
K. M. Klein ◽  
C. Park ◽  
S. Yang ◽  
S. Morris ◽  
V. Do ◽  
...  

ABSTRACTWe have developed a new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon. This new model is based on the dual Pearson semi-empirical implant depth profile model [1] and the UT-MARLOWE Monte Carlo boron ion implantation model [2]. This new model can predict with very high computatational efficiency two-dimensional as-implanted boron profiles as a function of energy, dose, tilt angle, rotation angle, masking edge orientation, and masking edge thickness.


1993 ◽  
Vol 316 ◽  
Author(s):  
Steven J. Morris ◽  
Shyh-Horng Yang ◽  
David H. Lim ◽  
AL. F. Tasch

ABSTRACTIn this paper, the first comprehensive and computationally-efficient two-dimensional model is reported for boron implants into (100) single-crystal silicon with explicit dependence on energy, dose, implant angles, mask height, mask orientation, and rotation of the wafer during the implant. The model and its implementation into SUPREM 4 are described, and where possible, the explicit dependencies are illustrated.


Author(s):  
Alexander N. Vlasov ◽  
Simon J. Cooke ◽  
Baruch Levush ◽  
Thomas M. Antonsen ◽  
Igor A. Chernyavskiy ◽  
...  

2016 ◽  
Vol 25 (3) ◽  
pp. 038401 ◽  
Author(s):  
Fang-ming He ◽  
Wen-qiu Xie ◽  
Ji-run Luo ◽  
Min Zhu ◽  
Wei Guo

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