A New Computationally-Efficient Two-Dimensional Model for Boron Implantation Into Single-Crystal Silicon

1991 ◽  
Vol 235 ◽  
Author(s):  
K. M. Klein ◽  
C. Park ◽  
S. Yang ◽  
S. Morris ◽  
V. Do ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Two Dimensional ◽  
Dimensional Model ◽  
Computationally Efficient ◽  
Crystal Silicon ◽  
New Model ◽  
Two Dimensional Model ◽  
Boron Implantation ◽  
Angle Rotation

ABSTRACTWe have developed a new computationally-efficient two-dimensional model for boron implantation into single-crystal silicon. This new model is based on the dual Pearson semi-empirical implant depth profile model [1] and the UT-MARLOWE Monte Carlo boron ion implantation model [2]. This new model can predict with very high computatational efficiency two-dimensional as-implanted boron profiles as a function of energy, dose, tilt angle, rotation angle, masking edge orientation, and masking edge thickness.

A New Computationally-Efficient 2-D Model for Boron Implants into (100) Single-Crystal Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
Steven J. Morris ◽  
Shyh-Horng Yang ◽  
David H. Lim ◽  
AL. F. Tasch
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Two Dimensional ◽  
Dimensional Model ◽  
Computationally Efficient ◽  
Crystal Silicon ◽  
Two Dimensional Model ◽  
D Model ◽  
Energy Dose

ABSTRACTIn this paper, the first comprehensive and computationally-efficient two-dimensional model is reported for boron implants into (100) single-crystal silicon with explicit dependence on energy, dose, implant angles, mask height, mask orientation, and rotation of the wafer during the implant. The model and its implementation into SUPREM 4 are described, and where possible, the explicit dependencies are illustrated.

Development and Demonstration of a Two-Dimensional, Accurate and Computationally-Efficient Model for Boron Implantation into Single-Crystal Silicon Through Overlying Oxide Layers

1995 ◽  
Vol 396 ◽  
Author(s):  
S. Morris ◽  
D. Lim ◽  
S.-H. Yang ◽  
S. Tian ◽  
K. Parab ◽  
...  
Keyword(s):  
Single Crystal Silicon ◽  
Oxide Layer Thickness ◽  
Two Dimensional ◽  
Computationally Efficient ◽  
Crystal Silicon ◽  
Oxide Layers ◽  
Boron Implantation ◽  
D Model ◽  
Process Simulator ◽  
Mask Edge

AbstractA 2-D model for boron implantation into (100) silicon through overlying oxide layers has been developed and implemented into the process simulator FLOOPS. This model is both accurate and computationally efficient and shows explicit dependencies on all of the key implant parameters: energy, dose, tilt and rotation angles, oxide layer thickness, mask height, mask edge orientation, and rotation of the wafer during implantation.

A Computationally Efficient Two-Dimensional Model of the Beam–Wave Interaction in a Coupled-Cavity TWT

2012 ◽  
Vol 40 (6) ◽  
pp. 1575-1589 ◽  
Author(s):  
Alexander N. Vlasov ◽  
Thomas M. Antonsen ◽  
Igor A. Chernyavskiy ◽  
David P. Chernin ◽  
Baruch Levush
Keyword(s):  
Wave Interaction ◽  
Two Dimensional ◽  
Dimensional Model ◽  
Computationally Efficient ◽  
Beam Wave ◽  
Two Dimensional Model ◽  
Beam Wave Interaction ◽  
Coupled Cavity

A New Local Electronic Stopping Model for the Monte Carlo Simulation of Arsenic Ion Implantation into (100) Single-Crystal Silicon

1995 ◽  
Vol 389 ◽  
Author(s):  
S.-H. Yang ◽  
S. Morris ◽  
S. Tian ◽  
K. Parab ◽  
A. F. Tasch ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Single Crystal ◽  
Density Functional ◽  
Single Crystal Silicon ◽  
Stopping Power ◽  
Crystal Silicon ◽  
Electronic Density ◽  
New Model ◽  
Electronic Stopping Power

ABSTRACTIn this paper is reported the development and implementation of a new local electronic stopping model for arsenic ion implantation into single-crystal silicon. Monte Carlo binary collision (MCBC) models are appropriate for studying channeling effects since it is possible to include the crystal structure in the simulators. One major inadequacy of existing MCBC codes is that the electronic stopping of implanted ions is not accurately and physically accounted for, although it is absolutely necessary for predicting the channeling tails of the profiles. In order to address this need, we have developed a new electronic stopping power model using a directionally dependent electronic density (to account for valence bonding) and an electronic stopping power based on the density functional approach. This new model has been implemented in the MCBC code, UT-MARLOWE The predictions of UT-MARLOWE with this new model are in very good agreement with experimentally-measured secondary ion mass spectroscopy (SIMS) profiles for both on-axis and off-axis arsenic implants in the energy range of 15-180 keV.

Residual Area Max Depth Model for Nanoindentation Hardness Size Effect of Single Crystal Silicon

2007 ◽  
Vol 339 ◽  
pp. 389-394
Author(s):  
L. Zhou ◽  
Ying Xue Yao ◽  
Shahjada Ahmed Pahlovy
Keyword(s):  
Size Effect ◽  
Single Crystal ◽  
Indentation Size Effect ◽  
Peak Load ◽  
Single Crystal Silicon ◽  
Indentation Hardness ◽  
Indentation Size ◽  
Crystal Silicon ◽  
New Model ◽  
Nanoindentation Hardness

In material nanoindentation hardness testing, the hardness will decrease with the indentation depth or peak load increase, i.e. indentation size effect (ISE). There are several models and equations were proposed to describe ISE. But the variables self-inaccurate in these models and equations, it will affect the result trueness. Single crystal silicon was used for nanoindentation experiments, and max depths were obtained from these experiments. Combining Matlab software, residual areas were obtained by atomic force microscopy (AFM). Based on max depth and residual area, a new model—residual area max depth model was proposed for indentation size effect in nanoindentaion hardness. The new model perhaps can understand and describe ISE in indentation hardness better than other models and equations.

Two-Dimensional Photonic Crystals Fabricated in Monolithic Single-Crystal Silicon

2010 ◽  
Vol 22 (2) ◽  
pp. 67-69 ◽  
Author(s):  
Sanja Hadzialic ◽  
Sora Kim ◽  
Aasmund Sveinung Sudbo ◽  
Olav Solgaard
Keyword(s):  
Photonic Crystals ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Two Dimensional ◽  
Crystal Silicon
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