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A Ka-Band 4-Stack Power Amplifier in 130-nm SiGe BiCMOS
2020 13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)
◽
10.1109/ucmmt49983.2020.9296123
◽
2020
◽
Author(s):
Hao Zhang
◽
Kenan Xie
◽
Keping Wang
Keyword(s):
Power Amplifier
◽
Ka Band
◽
Sige Bicmos
Download Full-text
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A K-/Ka-Band 21.4 dBm Power Amplifier with Four-Way Twisted Combiner in $0.13\ \mu\mathrm{m}$ SiGe BiCMOS
2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT)
◽
10.1109/icmmt45702.2019.8992517
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Author(s):
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A Reconfigurable K-/Ka-Band Power Amplifier With High PAE in 0.18- $\mu$m SiGe BiCMOS for Multi-Band Applications
IEEE Transactions on Microwave Theory and Techniques
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◽
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A Ka-band SiGe BICMOS power amplifier with 24 dBm output power
Microwave and Optical Technology Letters
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10.1002/mop.28933
◽
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◽
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◽
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◽
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Ramses Pierco
◽
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Bjorn Vandecasteele
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Power Amplifier
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Study of Power Amplifier Harmonic Output Termination for two AlGaN/GaN Technologies at K-/Ka-Band
2020 23rd International Microwave and Radar Conference (MIKON)
◽
10.23919/mikon48703.2020.9253908
◽
2020
◽
Author(s):
S. Samis
◽
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T. Maier
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P. Bruckner
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Keyword(s):
Power Amplifier
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Ka Band
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A Ka-band 33 dBm Stacked Power Amplifier Cell in 100 nm GaN-on-Si Technology
2020 23rd International Microwave and Radar Conference (MIKON)
◽
10.23919/mikon48703.2020.9253861
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2020
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Author(s):
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Marco Pirola
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Keyword(s):
Power Amplifier
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Ka Band
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A Ka-Band Single-Chip SiGe BiCMOS Phased-Array Transmit/Receive Front-End
IEEE Transactions on Microwave Theory and Techniques
◽
10.1109/tmtt.2016.2602837
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2016
◽
Vol 64
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◽
pp. 3667-3677
◽
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Author(s):
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◽
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Keyword(s):
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◽
Single Chip
◽
Ka Band
◽
Front End
◽
Sige Bicmos
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Design flow for a SiGe BiCMOS based power amplifier
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◽
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◽
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◽
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◽
Saurabh Sinha
◽
Monuko du Plessis
◽
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Keyword(s):
Power Amplifier
◽
Design Flow
◽
Sige Bicmos
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A 20dBm E-band power amplifier in SiGe BiCMOS technology
2012 42nd European Microwave Conference
◽
10.23919/eumc.2012.6459375
◽
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Roee Ben Yishay
◽
Roi Carmon
◽
Oded Katz
◽
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◽
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Power Amplifier
◽
Band Power
◽
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◽
Sige Bicmos
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Ka Band FEM Design Comparison with 45nm RFSOI CMOS and High Performance SiGe BiCMOS
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
◽
10.1109/icsict.2018.8565660
◽
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◽
Cited By ~ 2
Author(s):
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◽
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◽
Xiaowei Tian
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...
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◽
Ka Band
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Sige Bicmos
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A Ka-band HBT MMIC power amplifier
2000 IEEE MTT-S International Microwave Symposium Digest (Cat No 00CH37017) MWSYM-00
◽
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◽
S. Yamanouchi
◽
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◽
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Keyword(s):
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Ka Band
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