Design flow for a SiGe BiCMOS based power amplifier

2009 ◽  
Author(s):  
Mladen Bozanic ◽  
Saurabh Sinha ◽  
Monuko du Plessis ◽  
Alexandru Muller
Keyword(s):  
Power Amplifier ◽  
Design Flow ◽  
Sige Bicmos

A 20dBm E-band power amplifier in SiGe BiCMOS technology

2012 ◽  
Author(s):  
Roee Ben Yishay ◽  
Roi Carmon ◽  
Oded Katz ◽  
Benny Sheinman ◽  
Danny Elad
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos

A fully integrated flip-chip SiGe BiCMOS power amplifier for 802.11ac applications

2016 ◽  
Author(s):  
Apostolos Samelis ◽  
Edward Whittaker ◽  
Michael Ball ◽  
Alasdair Bruce ◽  
John Nisbet ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Flip Chip ◽  
Fully Integrated ◽  
Sige Bicmos

scholarly journals W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology

2019 ◽  
Vol 30 ◽  
pp. 01006
Author(s):  
Alexander Kozhemyakin ◽  
Ivan Kravchenko
Keyword(s):  
Power Consumption ◽  
Output Power ◽  
Design Flow ◽  
Voltage Controlled Oscillator ◽  
Automotive Radar ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Fundamental Oscillation ◽  
Simulation Results

The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz. According to simulation results phase noise is –89.3 dBc/Hz at 1 MHz offset, output power is –5.6 dBm and power consumption is 39 mW from 3.3 V source.

Sign in / Sign up

Export Citation Format

Share Document