Integration of nanostructures with acoustic delay lines within planar technologies give the chance of development the acoustonanoelectronic sensors with high sensitivity and selectivity. An initial step in this direction is investigation of interaction of tunnel nanostructures with acoustic piezoactive waves propagating in piezoelectric substrates. In this work the technology of nanowire production on the surface of lithium niobate plate has been developed. This technology is based on using electronic lithography method with help an electronic beam in a raster electronic microscope. The nanostructure consisting of nanowire with size 20nm x 180nm was placed in the center between IDTs of acoustic delay line. The volt-ampere characteristics of this nanowire in presence and at the absence of the acoustic wave were meazured by picoampermeter. The analysis has shown that presence of piezoactive acoustic wave is influenced on electric current in a nanowire.
Effect of Y-Length and Biasing of Lithium Niobate Mach-Zehnder Modulator on Insertion Loss and Extinction Ratio